Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 11

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF630 MOSFET N-CH 200V 9A TO220AB Harris Corporation	11,535	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	-	400mOhm @ 5.4A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	200 V	-	800 pF @ 25 V	-	-	TO-220AB	-	-	-
RFD20N03SM9A N-CHANNEL POWER MOSFET Harris Corporation	4,911	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	25mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	75 nC @ 20 V	30 V	±20V	1150 pF @ 25 V	-	-	TO-252 (DPAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRFD123 MOSFET N-CH 100V 1.3A 4DIP Harris Corporation	40,339	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.3A (Ta)	-	270mOhm @ 780mA, 10V	Through Hole	4V @ 250µA	16 nC @ 10 V	100 V	-	360 pF @ 25 V	-	-	4-HVMDIP	-	-	-
IRFU220 4.6A 200V 0.800 OHM N-CHANNEL Harris Corporation	13,111	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.8A (Tc)	-	800mOhm @ 2.9A, 10V	Through Hole	4V @ 250µA	14 nC @ 10 V	200 V	-	260 pF @ 25 V	-	-	TO-251AA	-	-	-
IRF643 N-CHANNEL POWER MOSFET Harris Corporation	3,050	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	220mOhm @ 10A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	150 V	±20V	1275 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
RFP8N18L N-CHANNEL POWER MOSFET Harris Corporation	2,390	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	5V	500mOhm @ 4A, 5V	Through Hole	2V @ 1mA	-	180 V	±10V	900 pF @ 25 V	-	-	TO-220AB	-	60W (Tc)	-55°C ~ 150°C (TJ)
RFP10N15L N-CHANNEL POWER MOSFET Harris Corporation	20,421	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	5V	300mOhm @ 5A, 5V	Through Hole	-	-	150 V	±10V	1200 pF @ 25 V	-	-	TO-220-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IRF642 N-CHANNEL POWER MOSFET Harris Corporation	6,085	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	220mOhm @ 10A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	200 V	±20V	1275 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
RF1S22N10 N-CHANNEL POWER MOSFET Harris Corporation	1,990	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF122 N-CHANNEL POWER MOSFET Harris Corporation	1,790	-	询价单	数据表	-	TO-204AA, TO-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	360mOhm @ 5.6A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	100 V	±20V	350 pF @ 25 V	-	-	TO-3	-	60W (Tc)	-55°C ~ 175°C (TJ)

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