Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 12

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUF75332P3 MOSFET N-CH 55V 60A TO220-3 Harris Corporation	4,863	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	19mOhm @ 60A, 10V	Through Hole	4V @ 250µA	85 nC @ 20 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-220-3	-	145W (Tc)	-55°C ~ 175°C (TJ)
IRFD210 0.6A 200V 1.500 OHM N-CHANNEL Harris Corporation	1,014	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600mA (Ta)	10V	1.5Ohm @ 360mA, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	200 V	±20V	140 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
IRFD9120 MOSFET P-CH 100V 1A 4DIP Harris Corporation	40,822	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	1A (Ta)	10V	600mOhm @ 600mA, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)
RFP50N05 N-CHANNEL POWER MOSFET Harris Corporation	22,264	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	22mOhm @ 50A, 10V	Through Hole	4V @ 250nA	160 nC @ 20 V	50 V	±20V	-	-	-	TO-220AB	-	132W (Tc)	-55°C ~ 175°C (TJ)
RFD8P05SM9A P-CHANNEL POWER MOSFET Harris Corporation	3,171	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75339P3 MOSFET N-CH 55V 75A TO220-3 Harris Corporation	13,980	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	12mOhm @ 75A, 10V	Through Hole	4V @ 250µA	130 nC @ 20 V	55 V	±20V	2000 pF @ 25 V	-	-	TO-220-3	-	200W (Tc)	-55°C ~ 175°C (TJ)
RF1S45N06LESM9A N-CHANNEL POWER MOSFET Harris Corporation	1,600	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9520 MOSFET P-CH 100V 6A TO220AB Harris Corporation	6,668	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6A (Tc)	-	600mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	100 V	±20V	300 pF @ 25 V	-	-	TO-220AB	-	40W (Tc)	-55°C ~ 150°C (TJ)
HRF3205L 100A 55V 0.008 OHM N-CHANNEL Harris Corporation	2,210	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	8mOhm @ 59A, 10V	Through Hole	4V @ 250µA	170 nC @ 10 V	55 V	±20V	4000 pF @ 25 V	-	-	TO-262 (I2PAK)	-	175W (Tc)	-55°C ~ 175°C (TJ)
RFM3N45 N-CHANNEL POWER MOSFET Harris Corporation	1,840	-	询价单	数据表	-	TO-204AA, TO-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	3Ohm @ 1.5A, 10V	Through Hole	4V @ 1mA	-	450 V	±20V	750 pF @ 25 V	-	-	TO-3	-	75W (Tc)	-55°C ~ 150°C (TJ)

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