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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS0343S

FDMS0343S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

4,477 -
FDMS0343S

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 49A (Tc) 4.5V, 10V 1.95mOhm @ 28A, 10V Surface Mount 3V @ 1mA 69 nC @ 10 V 25 V ±20V 4515 pF @ 13 V - - 8-PQFN (5x6), Power56 - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
FDC642P

FDC642P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

15,835 -
FDC642P

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 4.5V 65mOhm @ 4A, 4.5V Surface Mount 1.5V @ 250µA 16 nC @ 4.5 V 20 V ±8V 925 pF @ 10 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
FDMS0348

FDMS0348

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

63,000 -
FDMS0348

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 35A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 30 V ±20V 1590 pF @ 15 V - - 8-MLP (5x6) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FQN1N60CTA

FQN1N60CTA

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

37,002 -
FQN1N60CTA

数据表

QFET® TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 300mA (Tc) 10V 11.5Ohm @ 150mA, 10V Through Hole 4V @ 250µA 6.2 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - TO-92-3 - 1W (Ta), 3W (Tc) -55°C ~ 150°C (TJ)
FDZ193P

FDZ193P

MOSFET P-CH 20V 3A 6WLCSP

Fairchild Semiconductor

434,038 -
FDZ193P

数据表

PowerTrench® 6-UFBGA, WLCSP Bulk Active P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.7V, 4.5V 90mOhm @ 1A, 4.5V Surface Mount 1.5V @ 250µA 10 nC @ 10 V 20 V ±12V 660 pF @ 10 V - - 6-WLCSP (1x1.5) - 1.9W (Ta) -55°C ~ 150°C (TJ)
FDC855N

FDC855N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

4,528 -
FDC855N

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 6.1A (Ta) 4.5V, 10V 27mOhm @ 6.1A, 10V Surface Mount 3V @ 250µA 13 nC @ 10 V 30 V ±20V 655 pF @ 15 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
NTTFS4930NTAG

NTTFS4930NTAG

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

4,500 -
NTTFS4930NTAG

数据表

- 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta), 23A (Tc) 4.5V, 10V 23mOhm @ 6A, 10V Surface Mount 2.2V @ 250µA 5.5 nC @ 4.5 V 30 V ±20V 476 pF @ 15 V - - 8-WDFN (3.3x3.3) - 790mW (Ta), 20.2W (Tc) -55°C ~ 150°C (TJ)
FDMS0312S

FDMS0312S

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

3,234 -
FDMS0312S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 42A (Tc) 4.5V, 10V 4.9mOhm @ 18A, 10V Surface Mount 3V @ 1mA 46 nC @ 10 V 30 V ±20V 2820 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
FDMC0202S

FDMC0202S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

14,629 -
FDMC0202S

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V Surface Mount 3V @ 1mA 44 nC @ 10 V 25 V ±20V 2705 pF @ 13 V - - 8-PQFN (3.3x3.3) - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
SFU9014TU

SFU9014TU

5.3A, 60V, 0.5OHM, P-CHANNEL MOS

Fairchild Semiconductor

6,260 -
SFU9014TU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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