Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 101

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDD5N50TM 4A, 500V, 1.4OHM, N-CHANNEL POWE Fairchild Semiconductor	2,984	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.4Ohm @ 2A, 10V	Surface Mount	5V @ 250µA	15 nC @ 10 V	500 V	±30V	640 pF @ 25 V	-	-	TO-252 (DPAK)	-	40W (Tc)	-55°C ~ 150°C (TJ)
FDS8882 POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor	54,025	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	20mOhm @ 9A, 10V	Surface Mount	3V @ 250µA	20 nC @ 10 V	30 V	±20V	940 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FDD8796 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	23,432	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	5.7mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	52 nC @ 10 V	25 V	±20V	2610 pF @ 13 V	-	-	TO-252 (DPAK)	-	88W (Tc)	-55°C ~ 175°C (TJ)
FDME820NZT SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	9,500	-	询价单	数据表	PowerTrench®	6-PowerUFDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	1.8V, 4.5V	18mOhm @ 9A, 4.5V	Surface Mount	1V @ 250µA	8.5 nC @ 4.5 V	20 V	±12V	865 pF @ 10 V	-	-	MicroFet 1.6x1.6 Thin	-	2.1W (Ta)	-55°C ~ 150°C (TJ)
FDFM2P110 MOSFET P-CH 20V 3.5A MICROFET Fairchild Semiconductor	2,879	-	询价单	数据表	PowerTrench®	6-WDFN Exposed Pad	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	2.5V, 4.5V	140mOhm @ 3.5A, 4.5V	Surface Mount	1.5V @ 250µA	4 nC @ 4.5 V	20 V	±12V	280 pF @ 10 V	-	Schottky Diode (Isolated)	MicroFET 3x3mm	-	2W (Ta)	-55°C ~ 150°C (TJ)
FDS6670A SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	2,525	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	8mOhm @ 13A, 10V	Surface Mount	3V @ 250µA	30 nC @ 5 V	30 V	±20V	2220 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FDD8770 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	41,479	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	4mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	73 nC @ 10 V	25 V	±20V	3720 pF @ 13 V	-	-	TO-252 (DPAK)	-	115W (Tc)	-55°C ~ 175°C (TJ)
FQU8P10TU POWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor	27,370	-	询价单	数据表	QFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	10V	530mOhm @ 3.3A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	100 V	±30V	470 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 44W (Tc)	-55°C ~ 150°C (TJ)
FDD8896 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	850,700	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 94A (Tc)	4.5V, 10V	5.7mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	60 nC @ 10 V	30 V	±20V	2525 pF @ 15 V	-	-	TO-252 (DPAK)	-	80W (Tc)	-55°C ~ 175°C (TJ)
FQPF3N25 MOSFET N-CH 250V 2.3A TO220F Fairchild Semiconductor	204,011	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.3A (Tc)	10V	2.2Ohm @ 1.15A, 10V	Through Hole	5V @ 250µA	5.2 nC @ 10 V	250 V	±30V	170 pF @ 25 V	-	-	TO-220F-3	-	27W (Tc)	-55°C ~ 150°C (TJ)

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