Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 102

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDD8447L POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	18,050	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15.2A (Ta), 50A (Tc)	4.5V, 10V	8.5mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	52 nC @ 10 V	40 V	±20V	1970 pF @ 20 V	-	-	TO-252 (DPAK)	-	3.1W (Ta), 44W (Tc)	-55°C ~ 150°C (TJ)
FQU5N60CTU POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	4,040	-	询价单	数据表	QFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2.5Ohm @ 1.4A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	600 V	±30V	670 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 49W (Tc)	-55°C ~ 150°C (TJ)
FDD8880_F054 1-ELEMENT, N-CHANNEL POWER MOSFE Fairchild Semiconductor	13,660	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDU6N50TU MOSFET N-CH 500V 6A I-PAK Fairchild Semiconductor	4,579	-	询价单	数据表	UniFET™	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	900mOhm @ 3A, 10V	Through Hole	5V @ 250µA	16.6 nC @ 10 V	500 V	±30V	940 pF @ 25 V	-	-	IPAK	-	89W (Tc)	-55°C ~ 150°C (TJ)
FDMC7672 MOSFET N-CH 30V 16.9A/20A 8MLP Fairchild Semiconductor	9,009	-	询价单	数据表	PowerTrench®, SyncFET™	8-PowerWDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16.9A (Ta), 20A (Tc)	4.5V, 10V	5.7mOhm @ 16.9A, 10V	Surface Mount	3V @ 250µA	57 nC @ 10 V	30 V	±20V	3890 pF @ 15 V	-	-	8-MLP (3.3x3.3)	-	2.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)
FDD8878 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	30,452	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	4.5V, 10V	15mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	26 nC @ 10 V	30 V	±20V	880 pF @ 15 V	-	-	TO-252 (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
FDD6612A POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor	208,779	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9.5A (Ta), 30A (Tc)	4.5V, 10V	20mOhm @ 9.5A, 10V	Surface Mount	3V @ 250µA	9.4 nC @ 5 V	30 V	±20V	660 pF @ 15 V	-	-	TO-252 (DPAK)	-	2.8W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)
FDS8876 MOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor	1,312	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Ta)	4.5V, 10V	8.2mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 250µA	36 nC @ 10 V	30 V	±20V	1650 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FDD8782 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	119,700	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	11mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	25 V	±20V	1220 pF @ 13 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 175°C (TJ)
FDD8882 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	2,490	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12.6A (Ta), 55A (Tc)	4.5V, 10V	11.5mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	33 nC @ 10 V	30 V	±20V	1260 pF @ 15 V	-	-	TO-252 (DPAK)	-	55W (Tc)	-55°C ~ 175°C (TJ)

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