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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQH35N40

FQH35N40

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

846 -
FQH35N40

数据表

QFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 105mOhm @ 17.5A, 10V Through Hole 5V @ 250µA 140 nC @ 10 V 400 V ±30V 5600 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
FDH038AN08A1

FDH038AN08A1

MOSFET N-CH 75V 22A/80A TO247-3

Fairchild Semiconductor

4,541 -
FDH038AN08A1

数据表

PowerTrench® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 75 V ±20V 8665 pF @ 25 V - - TO-247 - 450W (Tc) -55°C ~ 175°C (TJ)
FCH077N65F-F085

FCH077N65F-F085

MOSFET N-CH 650V 54A TO247-3

Fairchild Semiconductor

148 -
FCH077N65F-F085

数据表

SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 10V 77mOhm @ 27A, 10V Through Hole 5V @ 250µA 164 nC @ 10 V 650 V ±20V 7162 pF @ 25 V AEC-Q101 - TO-247 Automotive 481W (Tc) -55°C ~ 150°C (TJ)
FQL50N40

FQL50N40

MOSFET N-CH 400V 50A TO264-3

Fairchild Semiconductor

338 -
FQL50N40

数据表

QFET® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 75mOhm @ 25A, 10V Through Hole 5V @ 250µA 210 nC @ 10 V 400 V ±30V 7500 pF @ 25 V - - HPM F2 - 460W (Tc) -55°C ~ 150°C (TJ)
HUF75852G3

HUF75852G3

MOSFET N-CH 150V 75A TO247-3

Fairchild Semiconductor

266 -
HUF75852G3

数据表

UltraFET™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 16mOhm @ 75A, 10V Through Hole 4V @ 250µA 480 nC @ 20 V 150 V ±20V 7690 pF @ 25 V - - TO-247 - 500W (Tc) -55°C ~ 175°C (TJ)
FCH041N65F

FCH041N65F

N-CHANNEL, MOSFET

Fairchild Semiconductor

450 -
FCH041N65F

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FCH041N65EF

FCH041N65EF

N-CHANNEL, MOSFET

Fairchild Semiconductor

310 -
FCH041N65EF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FCH47N60N

FCH47N60N

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

845 -
FCH47N60N

数据表

SupreMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 62mOhm @ 23.5A, 10V Through Hole 4V @ 250µA 151 nC @ 10 V 600 V ±30V 6700 pF @ 100 V - - TO-247 - 368W (Tc) -55°C ~ 150°C (TJ)
FDA2712

FDA2712

MOSFET N-CH 250V 64A TO3PN

Fairchild Semiconductor

2,332 -
FDA2712

数据表

UltraFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 34mOhm @ 40A, 10V Through Hole 5V @ 250µA 129 nC @ 10 V 250 V ±30V 10175 pF @ 25 V - - TO-3PN - 357W (Tc) -55°C ~ 150°C (TJ)
FCH47N60F-F085

FCH47N60F-F085

N-CHANNEL MOSFET 600V, 47A

Fairchild Semiconductor

397 -
FCH47N60F-F085

数据表

SuperFET™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 75mOhm @ 47A, 10V Through Hole 5V @ 250µA 250 nC @ 10 V 600 V ±30V 8000 pF @ 25 V AEC-Q101 - TO-247 Automotive 417W (Tc) -55°C ~ 150°C (TJ)
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