| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS0355SPOWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
6,000 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Ta), 22A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | Surface Mount | 3V @ 1mA | 31 nC @ 10 V | 30 V | ±20V | 1815 pF @ 15 V | - | - | 8-PQFN (5x6), Power56 | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) |
|
FDD6N25TMPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
1,058,749 | - |
|
数据表 |
UniFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | 10V | 1.1Ohm @ 2.2A, 10V | Surface Mount | 5V @ 250µA | 6 nC @ 10 V | 250 V | ±30V | 250 pF @ 25 V | - | - | TO-252AA | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FQD4N20TMPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
2,537 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 1.4Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 6.5 nC @ 10 V | 200 V | ±30V | 220 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS8433A-GFDS8433A - MOSFET 20V 47.0 MOHM Fairchild Semiconductor |
524,888 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Ta) | 2.5V, 4.5V | 47mOhm @ 5A, 4.5V | Surface Mount | 1V @ 250µA | 28 nC @ 5 V | 20 V | ±8V | 1130 pF @ 10 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDZ663PFDZ663P - FDZ663P - MOSFET P-CHA Fairchild Semiconductor |
60,000 | - |
|
数据表 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.7A (Ta) | 1.5V, 4.5V | 134mOhm @ 2A, 4.5V | Surface Mount | 1.2V @ 250µA | 8.2 nC @ 4.5 V | 20 V | ±8V | 525 pF @ 10 V | - | - | 4-WLCSP (0.8x0.8) | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
FDC653NSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,505 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Ta) | 4.5V, 10V | 35mOhm @ 5A, 10V | Surface Mount | 2V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 350 pF @ 15 V | - | - | SuperSOT™-6 | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) |
|
FDZ661PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
106,670 | - |
|
数据表 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | Surface Mount | 1.2V @ 250µA | 8.8 nC @ 4.5 V | 20 V | ±8V | 555 pF @ 10 V | - | - | 4-WLCSP (0.8x0.8) | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
FDMS7694POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,717 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13.2A (Ta), 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.2A, 10V | Surface Mount | 3V @ 250µA | 22 nC @ 10 V | 30 V | ±20V | 1410 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMC88849A, 30V, 0.019OHM, N-CHANNEL POW Fairchild Semiconductor |
198,694 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Ta), 15A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | Surface Mount | 2.5V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 685 pF @ 15 V | - | - | 8-MLP (3.3x3.3) | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS6612ASMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
86,571 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | Surface Mount | 3V @ 250µA | 7.6 nC @ 5 V | 30 V | ±20V | 560 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |