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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQH90N10V2

FQH90N10V2

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

370 -
FQH90N10V2

数据表

QFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 105A (Tc) 10V 10mOhm @ 52.5A, 10V Through Hole 4V @ 250µA 191 nC @ 10 V 100 V ±30V 6150 pF @ 25 V - - TO-247AD - 330W (Tc) -55°C ~ 175°C (TJ)
FCP16N60N

FCP16N60N

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

1,656 -
FCP16N60N

数据表

SupreMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 199mOhm @ 8A, 10V Through Hole 4V @ 250µA 52.3 nC @ 10 V 600 V ±30V 2170 pF @ 100 V - - TO-220-3 - 134.4W (Tc) -55°C ~ 150°C (TJ)
FDP7045L

FDP7045L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

81,875 -
FDP7045L

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tj) 4.5V, 10V 4.5mOhm @ 50A, 10V Through Hole 3V @ 250µA 58 nC @ 5 V 30 V ±20V 4357 pF @ 15 V - - TO-220-3 - 107W (Ta) -55°C ~ 175°C (TJ)
FDB6035L

FDB6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

800 -
FDB6035L

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 30 V ±20V 1230 pF @ 15 V - - TO-263AB - 75W (Tc) -65°C ~ 175°C (TJ)
FDP8442

FDP8442

MOSFET N-CH 40V 23A/80A TO220-3

Fairchild Semiconductor

22,479 -
FDP8442

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 80A (Tc) 10V 3.1mOhm @ 80A, 10V Through Hole 4V @ 250µA 235 nC @ 10 V 40 V ±20V 12200 pF @ 25 V - - TO-220-3 - 254W (Tc) -55°C ~ 175°C (TJ)
FDP79N15

FDP79N15

MOSFET N-CH 150V 79A TO220-3

Fairchild Semiconductor

6,035 -
FDP79N15

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 79A (Tc) 10V 30mOhm @ 39.5A, 10V Through Hole 5V @ 250µA 73 nC @ 10 V 150 V ±30V 3410 pF @ 25 V - - TO-220-3 - 463W (Tc) -55°C ~ 150°C (TJ)
FDB5645

FDB5645

MOSFET N-CH 60V 80A D2PAK

Fairchild Semiconductor

7,652 -
FDB5645

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 6V, 10V 9.5mOhm @ 40A, 10V Surface Mount 4V @ 250µA 107 nC @ 10 V 60 V ±20V 4468 pF @ 30 V - - TO-263 (D2PAK) - 125W (Tc) -65°C ~ 175°C (TJ)
FDI038AN06A0_NL

FDI038AN06A0_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

169 -
FDI038AN06A0_NL

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V Through Hole 4V @ 250µA 124 nC @ 10 V 60 V ±20V 6400 pF @ 25 V - - TO-262 (I2PAK) - 310W (Tc) -55°C ~ 175°C (TJ)
FDA62N28

FDA62N28

MOSFET N-CH 280V 62A TO3PN

Fairchild Semiconductor

605 -
FDA62N28

数据表

UniFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 62A (Tc) 10V 51mOhm @ 31A, 10V Through Hole 5V @ 250µA 100 nC @ 10 V 280 V ±30V 4630 pF @ 25 V - - TO-3PN - 500W (Tc) -55°C ~ 150°C (TJ)
FCP25N60N

FCP25N60N

MOSFET N-CH 600V TO-220-3

Fairchild Semiconductor

854 -
FCP25N60N

数据表

SupreMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 125mOhm @ 12.5A, 10V Through Hole 4V @ 250µA 74 nC @ 10 V 600 V ±30V 3352 pF @ 100 V - - TO-220-3 - 216W (Tc) -55°C ~ 150°C (TJ)
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