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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQA34N25

FQA34N25

MOSFET N-CH 250V 34A TO3P

Fairchild Semiconductor

6,555 -
FQA34N25

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 85mOhm @ 17A, 10V Through Hole 5V @ 250µA 80 nC @ 10 V 250 V ±30V 2750 pF @ 25 V - - TO-3P - 245W (Tc) -55°C ~ 150°C (TJ)
FDI047AN08A0

FDI047AN08A0

MOSFET N-CH 75V 80A I2PAK

Fairchild Semiconductor

787 -
FDI047AN08A0

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V Through Hole 4V @ 250µA 138 nC @ 10 V 75 V ±20V 6600 pF @ 25 V - - TO-262 (I2PAK) - 310W (Tc) -55°C ~ 175°C (TJ)
ISL9N303AS3

ISL9N303AS3

MOSFET N-CH 30V 75A I2PAK

Fairchild Semiconductor

12,400 -
ISL9N303AS3

数据表

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 3.2mOhm @ 75A, 10V Through Hole 3V @ 250µA 172 nC @ 10 V 30 V ±20V 7000 pF @ 15 V - - TO-262 (I2PAK) - 215W (Tc) -55°C ~ 175°C (TJ)
FQB34N20TM

FQB34N20TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

800 -
FQB34N20TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 75mOhm @ 15.5A, 10V Surface Mount 5V @ 250µA 78 nC @ 10 V 200 V ±30V 3100 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ)
FQAF15N70

FQAF15N70

MOSFET N-CH 700V 9.5A TO3PF

Fairchild Semiconductor

295 -
FQAF15N70

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 560mOhm @ 4.8A, 10V Through Hole 5V @ 250µA 90 nC @ 10 V 700 V ±30V 3600 pF @ 25 V - - TO-3PF - 120W (Tc) -55°C ~ 150°C (TJ)
FDS7788

FDS7788

MOSFET N-CH 30V 18A 8SOIC

Fairchild Semiconductor

73,001 -
FDS7788

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 4mOhm @ 18A, 10V Surface Mount 3V @ 250µA 48 nC @ 5 V 30 V ±20V 3845 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS4770

FDS4770

MOSFET N-CH 40V 13.2A 8SOIC

Fairchild Semiconductor

14,180 -
FDS4770

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13.2A (Ta) 10V 7.5mOhm @ 13.2A, 10V Surface Mount 5V @ 250µA 67 nC @ 10 V 40 V ±20V 2819 pF @ 20 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDB024N04AL7

FDB024N04AL7

MOSFET N-CH 40V 100A TO263-7

Fairchild Semiconductor

28,800 -
FDB024N04AL7

数据表

PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.4mOhm @ 80A, 10V Surface Mount 3V @ 250µA 109 nC @ 10 V 40 V ±20V 7300 pF @ 25 V - - TO-263-7 - 214W (Tc) -55°C ~ 175°C (TJ)
FCH20N60

FCH20N60

MOSFET N-CH 600V 20A TO247-3

Fairchild Semiconductor

838 -
FCH20N60

数据表

SuperFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 5V @ 250µA 98 nC @ 10 V 600 V ±30V 3080 pF @ 25 V - - TO-247 - 208W (Tc) -55°C ~ 150°C (TJ)
FQPF12N60

FQPF12N60

MOSFET N-CH 600V 5.8A TO220F

Fairchild Semiconductor

55,000 -
FQPF12N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 700mOhm @ 2.9A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-220F-3 - 55W (Tc) -55°C ~ 150°C (TJ)
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