Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 12

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFS830B N-CHANNEL POWER MOSFET Fairchild Semiconductor	11,242	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tj)	10V	1.5Ohm @ 2.25A, 10V	Through Hole	4V @ 250µA	35 nC @ 10 V	500 V	±30V	1050 pF @ 25 V	-	-	TO-220F-3	-	38W (Tj)	-55°C ~ 150°C (TJ)
FDMB668P MOSFET P-CH 20V 6.1A 8MLP Fairchild Semiconductor	10,643	-	询价单	数据表	PowerTrench®	8-PowerWDFN	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.1A (Ta)	1.8V, 4.5V	35mOhm @ 6.1A, 4.5V	Surface Mount	1V @ 250µA	59 nC @ 10 V	20 V	±8V	2085 pF @ 10 V	-	-	8-MLP, MicroFET (3x1.9)	-	1.9W (Ta)	-55°C ~ 150°C (TJ)
HUF75617D3 MOSFET N-CH 100V 16A IPAK Fairchild Semiconductor	5,072	-	询价单	数据表	UltraFET™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	90mOhm @ 16A, 10V	Through Hole	4V @ 250µA	39 nC @ 20 V	100 V	±20V	570 pF @ 25 V	-	-	IPAK	-	64W (Tc)	-55°C ~ 175°C (TJ)
IRFU430BTU N-CHANNEL POWER MOSFET Fairchild Semiconductor	5,040	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	10V	1.5Ohm @ 1.75A, 10V	Through Hole	4V @ 250µA	33 nC @ 10 V	500 V	±30V	1050 pF @ 25 V	-	-	IPAK	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRFR110ATM N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,197	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.7A (Ta)	10V	400mOhm @ 2.35A, 10V	Surface Mount	4V @ 250µA	12 nC @ 10 V	100 V	±20V	240 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)
SFR2955TF P-CHANNEL POWER MOSFET Fairchild Semiconductor	2,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	7.6A (Tc)	10V	300mOhm @ 3.8A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	60 V	±20V	600 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)
FDFMA3P029Z MOSFET P-CH 30V 3.3A 6MICROFET Fairchild Semiconductor	1,964	-	询价单	数据表	PowerTrench®	6-WDFN Exposed Pad	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.3A (Ta)	-	87mOhm @ 3.3A, 10V	Surface Mount	3V @ 250µA	10 nC @ 10 V	30 V	-	435 pF @ 15 V	-	Schottky Diode (Isolated)	6-MLP (2x2)	-	1.4W (Ta)	-55°C ~ 150°C (TJ)
IRFW820BTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,574	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	2.6Ohm @ 1.25A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	500 V	±30V	610 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 49W (Tc)	-55°C ~ 150°C (TJ)
SI4835DY P-CHANNEL MOSFET Fairchild Semiconductor	1,298	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	8.8A (Ta)	4.5V, 10V	20mOhm @ 8.8A, 10V	Surface Mount	3V @ 250µA	27 nC @ 10 V	30 V	±25V	1680 pF @ 15 V	-	-	8-SOIC	-	1W (Ta)	-55°C ~ 150°C (TJ)
HUFA76409D3S MOSFET N-CH 60V 18A TO252AA Fairchild Semiconductor	1,222	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	63mOhm @ 18A, 10V	Surface Mount	3V @ 250µA	15 nC @ 10 V	60 V	±16V	485 pF @ 25 V	-	-	TO-252 (DPAK)	-	49W (Tc)	-55°C ~ 175°C (TJ)

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