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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS0306S1-ELEMENT, N-CHANNEL Fairchild Semiconductor |
12,000 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFU9034TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,477 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 140mOhm @ 7A, 10V | Through Hole | 4V @ 250µA | 38 nC @ 10 V | 60 V | ±25V | 1155 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR430BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
207,739 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 1.5Ohm @ 1.75A, 10V | Surface Mount | 4V @ 250µA | 33 nC @ 10 V | 500 V | ±30V | 1050 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDS9412MOSFET N-CH 30V 7.9A 8SOIC Fairchild Semiconductor |
113,738 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.9A (Ta) | 4.5V, 10V | 22mOhm @ 7.9A, 10V | Surface Mount | 2V @ 250µA | 22 nC @ 10 V | 30 V | ±20V | 830 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
RFP8P10P-CHANNEL POWER MOSFET Fairchild Semiconductor |
29,973 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 400mOhm @ 8A, 10V | Through Hole | 4V @ 250µA | - | 100 V | ±20V | 1500 pF @ 25 V | - | - | TO-220AB | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SFR9120TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
27,709 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 4.9A (Tc) | 10V | 600mOhm @ 2.5A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 100 V | ±30V | 550 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) |
|
FDFMA2P859TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
14,392 | - |
|
数据表 |
PowerTrench® | 6-UDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | Surface Mount | 1.3V @ 250µA | 6 nC @ 4.5 V | 20 V | ±8V | 435 pF @ 10 V | - | Schottky Diode (Isolated) | MicroFET 2x2 Thin | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) |
|
FDFMA2P853TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
13,740 | - |
|
数据表 |
PowerTrench® | 6-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | Surface Mount | 1.3V @ 250µA | 6 nC @ 4.5 V | 20 V | ±8V | 435 pF @ 10 V | - | Schottky Diode (Isolated) | 6-MicroFET (2x2) | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) |
|
FDD6780MOSFET N-CH 25V 16.5A/30A DPAK Fairchild Semiconductor |
12,410 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.5A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.5A, 10V | Surface Mount | 3V @ 250µA | 29 nC @ 10 V | 25 V | ±20V | 1590 pF @ 13 V | - | - | TO-252 (DPAK) | - | 3.7W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF76009D3STMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
11,609 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 5V, 10V | 27mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 13 nC @ 10 V | 20 V | ±20V | 470 pF @ 20 V | - | - | TO-252 (DPAK) | - | 41W (Tc) | -55°C ~ 150°C (TJ) |
