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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
ISL9N302AS3

ISL9N302AS3

MOSFET N-CH 30V 75A TO-262AA

Fairchild Semiconductor

400 -
ISL9N302AS3

数据表

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 2.3mOhm @ 75A, 10V Through Hole 3V @ 250µA 300 nC @ 10 V 30 V ±20V 11000 pF @ 15 V - - I2PAK (TO-262) - 345W (Tc) -
IRF644B-FP001

IRF644B-FP001

IRF644B - DISCRETE MOSFET

Fairchild Semiconductor

636 -
IRF644B-FP001

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 280mOhm @ 7A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 250 V ±30V 1600 pF @ 25 V - - TO-220-3 - 139W (Tc) -55°C ~ 150°C (TJ)
FDS6299S

FDS6299S

MOSFET N-CH 30V 21A 8SOIC

Fairchild Semiconductor

25,342 -
FDS6299S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 3.9mOhm @ 21A, 10V Surface Mount 3V @ 1mA 81 nC @ 10 V 30 V ±20V 3880 pF @ 15 V - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
FDS6162N7

FDS6162N7

MOSFET N-CH 20V 23A 8SO

Fairchild Semiconductor

15,029 -
FDS6162N7

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta) 2.5V, 4.5V 3.5mOhm @ 23A, 4.5V Surface Mount 1.5V @ 250µA 73 nC @ 4.5 V 20 V ±12V 5521 pF @ 10 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FDS7088N7

FDS7088N7

MOSFET N-CH 30V 23A 8SO

Fairchild Semiconductor

1,454 -
FDS7088N7

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta) 4.5V, 10V 3mOhm @ 23A, 10V Surface Mount 3V @ 250µA 48 nC @ 5 V 30 V ±20V 3845 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
HUF76645P3

HUF76645P3

MOSFET N-CH 100V 75A TO220-3

Fairchild Semiconductor

1,069 -
HUF76645P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V Through Hole 3V @ 250µA 153 nC @ 10 V 100 V ±16V 4400 pF @ 25 V - - TO-220-3 - 310W (Tc) -55°C ~ 175°C (TJ)
HUF76145S3S

HUF76145S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,630 -
HUF76145S3S

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V Surface Mount 3V @ 250µA 156 nC @ 10 V 30 V ±20V 4900 pF @ 25 V - - TO-263AB - 270W (Tc) -40°C ~ 150°C (TJ)
FDS2170N3

FDS2170N3

MOSFET N-CH 200V 3A 8SOIC

Fairchild Semiconductor

2,627 -
FDS2170N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 128mOhm @ 3A, 10V Surface Mount 4.5V @ 250µA 36 nC @ 10 V 200 V ±20V 1292 pF @ 100 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FQP7N80

FQP7N80

MOSFET N-CH 800V 6.6A TO220-3

Fairchild Semiconductor

6,500 -
FQP7N80

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 800 V ±30V 1850 pF @ 25 V - - TO-220-3 - 167W (Tc) -55°C ~ 150°C (TJ)
FQA10N60C

FQA10N60C

MOSFET N-CH 600V 10A TO3P

Fairchild Semiconductor

33,277 -
FQA10N60C

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 730mOhm @ 5A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±30V 2040 pF @ 25 V - - TO-3P - 192W (Tc) -55°C ~ 150°C (TJ)
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