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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDB5690

FDB5690

MOSFET N-CH 60V 32A TO263AB

Fairchild Semiconductor

18,503 -
FDB5690

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 6V, 10V 27mOhm @ 16A, 10V Surface Mount 4V @ 250µA 33 nC @ 10 V 60 V ±20V 1120 pF @ 25 V - - TO-263 (D2PAK) - 58W (Tc) -65°C ~ 175°C (TJ)
FDB5680

FDB5680

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,665 -
FDB5680

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 20mOhm @ 20A, 10V Surface Mount 4V @ 250µA 46 nC @ 10 V 60 V ±20V 1850 pF @ 25 V - - TO-263AB - 65W (Tc) -65°C ~ 175°C (TJ)
FQAF6N80

FQAF6N80

MOSFET N-CH 800V 4.4A TO3PF

Fairchild Semiconductor

892 -
FQAF6N80

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.95Ohm @ 2.2A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 800 V ±30V 1500 pF @ 25 V - - TO-3PF - 90W (Tc) -55°C ~ 150°C (TJ)
FQAF34N25

FQAF34N25

MOSFET N-CH 250V 21.7A TO3PF

Fairchild Semiconductor

610 -
FQAF34N25

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 21.7A (Tc) 10V 85mOhm @ 10.9A, 10V Through Hole 5V @ 250µA 80 nC @ 10 V 250 V ±30V 2750 pF @ 25 V - - TO-3PF - 100W (Tc) -55°C ~ 150°C (TJ)
FQB14N30TM

FQB14N30TM

MOSFET N-CH 300V 14.4A D2PAK

Fairchild Semiconductor

277 -
FQB14N30TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14.4A (Tc) 10V 290mOhm @ 7.2A, 10V Surface Mount 5V @ 250µA 40 nC @ 10 V 300 V ±30V 1360 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ)
FDA16N50

FDA16N50

MOSFET N-CH 500V 16.5A TO3PN

Fairchild Semiconductor

211 -
FDA16N50

数据表

UniFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 500 V ±30V 1945 pF @ 25 V - - TO-3PN - 205W (Tc) -55°C ~ 150°C (TJ)
FDS4070N7

FDS4070N7

MOSFET N-CH 40V 15.3A 8SO

Fairchild Semiconductor

69,332 -
FDS4070N7

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15.3A (Ta) 10V 7mOhm @ 15.3A, 10V Surface Mount 5V @ 250µA 67 nC @ 10 V 40 V ±20V 2819 pF @ 20 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FDS6064N3

FDS6064N3

MOSFET N-CH 20V 23A 8SO

Fairchild Semiconductor

27,500 -
FDS6064N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta) 1.8V, 4.5V 4mOhm @ 23A, 4.5V Surface Mount 1.5V @ 250µA 98 nC @ 4.5 V 20 V ±8V 7191 pF @ 10 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FDS6162N3

FDS6162N3

MOSFET N-CH 20V 21A 8SO

Fairchild Semiconductor

25,637 -
FDS6162N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 2.5V, 4.5V 4.5mOhm @ 21A, 4.5V Surface Mount 1.5V @ 250µA 73 nC @ 4.5 V 20 V ±12V 5521 pF @ 10 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FDS4070N3

FDS4070N3

MOSFET N-CH 40V 15.3A 8SO

Fairchild Semiconductor

8,613 -
FDS4070N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15.3A (Ta) 10V 7.5mOhm @ 15.3A, 10V Surface Mount 5V @ 250µA 67 nC @ 10 V 40 V ±20V 2819 pF @ 20 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
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