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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDB7030BLS

FDB7030BLS

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

34,400 -
FDB7030BLS

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60A (Ta) 4.5V, 10V 9mOhm @ 30A, 10V Surface Mount 3V @ 250µA 24 nC @ 5 V 30 V ±20V 1760 pF @ 15 V - - TO-263 (D2PAK) - 60W (Tc) -65°C ~ 175°C (TJ)
FDP040N06

FDP040N06

MOSFET N-CH 60V 120A TO220-3

Fairchild Semiconductor

800 -
FDP040N06

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4mOhm @ 75A, 10V Through Hole 4.5V @ 250µA 133 nC @ 10 V 60 V ±20V 8235 pF @ 25 V - - TO-220-3 - 231W (Tc) -55°C ~ 175°C (TJ)
FQA14N30

FQA14N30

MOSFET N-CH 300V 15A TO3P

Fairchild Semiconductor

230 -
FQA14N30

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 7.5A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 300 V ±30V 1360 pF @ 25 V - - TO-3P - 160W (Tc) -55°C ~ 150°C (TJ)
FDS6676

FDS6676

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

8,765 -
FDS6676

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 14.5A (Ta) 4.5V, 10V 7mOhm @ 14.5A, 10V Surface Mount 3V @ 250µA 63 nC @ 5 V 30 V ±16V 5103 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 175°C (TJ)
FDB6670AS

FDB6670AS

MOSFET N-CH 30V 62A TO263AB

Fairchild Semiconductor

5,998 -
FDB6670AS

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 62A (Ta) 4.5V, 10V 8.5mOhm @ 31A, 10V Surface Mount 3V @ 1mA 39 nC @ 15 V 30 V ±20V 1570 pF @ 15 V - - TO-263 (D2PAK) - 62.5W (Tc) -55°C ~ 150°C (TJ)
FQP11N50CF

FQP11N50CF

MOSFET N-CH 500V 11A TO220-3

Fairchild Semiconductor

2,116 -
FQP11N50CF

数据表

FRFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 550mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 55 nC @ 10 V 500 V ±30V 2055 pF @ 25 V - - TO-220-3 - 195W (Tc) -55°C ~ 150°C (TJ)
FDB3672

FDB3672

MOSFET N-CH 100V 7.2A/44A TO263

Fairchild Semiconductor

400 -
FDB3672

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7.2A (Ta), 44A (Tc) 6V, 10V 28mOhm @ 44A, 10V Surface Mount 4V @ 250µA 31 nC @ 10 V 100 V ±20V 1710 pF @ 25 V - - TO-263 (D2PAK) - 120W (Tc) -55°C ~ 175°C (TJ)
HUF75345P3_NL

HUF75345P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

252 -
HUF75345P3_NL

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 7mOhm @ 75A, 10V Through Hole 4V @ 250µA 275 nC @ 20 V 55 V ±20V 4000 pF @ 25 V - - TO-220-3 - 325W (Tc) -55°C ~ 175°C (TJ)
FDC655AN

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

Fairchild Semiconductor

299,497 -
FDC655AN

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.3A (Ta) 4.5V, 10V 27mOhm @ 6.3A, 10V Surface Mount 3V @ 250µA 13 nC @ 5 V 30 V ±20V 830 pF @ 15 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
FDS2070N3

FDS2070N3

MOSFET N-CH 150V 4.1A 8SO

Fairchild Semiconductor

8,740 -
FDS2070N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.1A (Ta) 6V, 10V 78mOhm @ 4.1A, 10V Surface Mount 4V @ 250µA 53 nC @ 10 V 150 V ±20V 1884 pF @ 75 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
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