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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDA15N65

FDA15N65

MOSFET N-CH 650V 16A TO3PN

Fairchild Semiconductor

2,274 -
FDA15N65

数据表

UniFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 440mOhm @ 8A, 10V Through Hole 5V @ 250µA 63 nC @ 10 V 650 V ±30V 3095 pF @ 25 V - - TO-3PN - 260W (Tc) -55°C ~ 150°C (TJ)
FDP5500

FDP5500

N CHANNEL ULTRAFET 55V, 80A, 7M

Fairchild Semiconductor

2,045 -
FDP5500

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 7mOhm @ 80A, 10V Through Hole 4V @ 250µA 269 nC @ 20 V 55 V ±20V 3565 pF @ 25 V - - TO-220-3 - 375W (Tc) -55°C ~ 175°C (TJ)
FDP7030L

FDP7030L

MOSFET N-CH 30V 80A TO220-3

Fairchild Semiconductor

29,300 -
FDP7030L

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 4.5V, 10V 7mOhm @ 40A, 10V Through Hole 3V @ 250µA 33 nC @ 5 V 30 V ±20V 2440 pF @ 15 V - - TO-220-3 - 68W (Tc) -65°C ~ 175°C (TJ)
FCP21N60N

FCP21N60N

N-CHANNEL, MOSFET

Fairchild Semiconductor

17,389 -
FCP21N60N

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) - - - Through Hole - - 600 V - - - - TO-220-3 - - -
NDP7061

NDP7061

MOSFET N-CH 60V 64A TO220-3

Fairchild Semiconductor

5,561 -
NDP7061

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 16mOhm @ 35A, 10V Through Hole 4V @ 250µA 100 nC @ 10 V 60 V ±20V 1930 pF @ 25 V - - TO-220-3 - 130W (Tc) -65°C ~ 175°C (TJ)
FDD14AN06LA0

FDD14AN06LA0

MOSFET N-CH 60V 9.5A/50A TO252AA

Fairchild Semiconductor

56,284 -
FDD14AN06LA0

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta), 50A (Tc) 5V, 10V 11.6mOhm @ 50A, 10V Surface Mount 3V @ 250µA 32 nC @ 5 V 60 V ±20V 2810 pF @ 25 V - - TO-252 (DPAK) - 125W (Tc) -55°C ~ 175°C (TJ)
FDS7766S

FDS7766S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

5,000 -
FDS7766S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 4.5V, 10V 5.5mOhm @ 17A, 10V Surface Mount 3V @ 1mA 58 nC @ 5 V 30 V ±16V 4785 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
FQA13N80

FQA13N80

MOSFET N-CH 800V 12.6A TO3PN

Fairchild Semiconductor

134 -
FQA13N80

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12.6A (Tc) 10V 750mOhm @ 6.3A, 10V Through Hole 5V @ 250µA 88 nC @ 10 V 800 V ±30V 3500 pF @ 25 V - - TO-3PN - 300W (Tc) -55°C ~ 150°C (TJ)
RF1S70N06SM

RF1S70N06SM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

6,785 -
RF1S70N06SM

数据表

PSPICE® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 14mOhm @ 70A, 10V Surface Mount 4V @ 250µA 215 nC @ 20 V 60 V ±20V 3000 pF @ 25 V - - TO-263AB - 150W (Tc) -55°C ~ 175°C (TJ)
FQB6N70TM

FQB6N70TM

MOSFET N-CH 700V 6.2A D2PAK

Fairchild Semiconductor

3,322 -
FQB6N70TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V Surface Mount 5V @ 250µA 40 nC @ 10 V 700 V ±30V 1400 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ)
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