富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP5680

FDP5680

MOSFET N-CH 60V 40A TO220-3

Fairchild Semiconductor

7,661 -
FDP5680

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 20mOhm @ 20A, 10V Through Hole 4V @ 250µA 46 nC @ 10 V 60 V ±20V 1850 pF @ 25 V - - TO-220-3 - 65W (Tc) -65°C ~ 175°C (TJ)
FDS7764S

FDS7764S

MOSFET N-CH 30V 13.5A 8SOIC

Fairchild Semiconductor

88,496 -
FDS7764S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 7.5mOhm @ 13.5A, 10V Surface Mount 2V @ 1mA 35 nC @ 5 V 30 V ±16V 2800 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDB8442

FDB8442

MOSFET N-CH 40V 28A/80A TO263AB

Fairchild Semiconductor

10,541 -
FDB8442

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V Surface Mount 4V @ 250µA 235 nC @ 10 V 40 V ±20V 12200 pF @ 25 V - - TO-263 (D2PAK) - 254W (Tc) -55°C ~ 175°C (TJ)
FQAF10N80

FQAF10N80

MOSFET N-CH 800V 6.7A TO3PF

Fairchild Semiconductor

7,549 -
FQAF10N80

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Tc) 10V 1.05Ohm @ 3.35A, 10V Through Hole 5V @ 250µA 71 nC @ 10 V 800 V ±30V 2700 pF @ 25 V - - TO-3PF - 113W (Tc) -55°C ~ 150°C (TJ)
FQA8N90C

FQA8N90C

MOSFET N-CH 900V 8A TO3P

Fairchild Semiconductor

1,413 -
FQA8N90C

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.9Ohm @ 4A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 900 V ±30V 2080 pF @ 25 V - - TO-3P - 240W (Tc) -55°C ~ 150°C (TJ)
FQAF8N80

FQAF8N80

MOSFET N-CH 800V 5.9A TO3PF

Fairchild Semiconductor

557 -
FQAF8N80

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.9A (Tc) 10V 1.2Ohm @ 2.95A, 10V Through Hole 5V @ 250µA 57 nC @ 10 V 800 V ±30V 2350 pF @ 25 V - - TO-3PF - 107W (Tc) -55°C ~ 150°C (TJ)
FDMS2506SDC

FDMS2506SDC

MOSFET N-CH 25V 39A/49A DLCOOL56

Fairchild Semiconductor

3,205 -
FDMS2506SDC

数据表

Dual Cool™, PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 39A (Ta), 49A (Tc) 4.5V, 10V 1.45mOhm @ 30A, 10V Surface Mount 3V @ 1mA 93 nC @ 10 V 25 V ±20V 5945 pF @ 13 V - - 8-PQFN (5x6) - 3.3W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
HUF76443P3

HUF76443P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

6,550 -
HUF76443P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V Through Hole 3V @ 250µA 129 nC @ 10 V 60 V ±16V 4115 pF @ 25 V - - TO-220-3 - 260W (Tc) -55°C ~ 175°C (TJ)
FDI040N06

FDI040N06

MOSFET N-CH 60V 120A I2PAK

Fairchild Semiconductor

252 -
FDI040N06

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4mOhm @ 75A, 10V Through Hole 4.5V @ 250µA 133 nC @ 10 V 60 V ±20V 8235 pF @ 25 V - - TO-262 (I2PAK) - 231W (Tc) -55°C ~ 175°C (TJ)
FDS6572A

FDS6572A

MOSFET N-CH 20V 16A 8SOIC

Fairchild Semiconductor

365,617 -
FDS6572A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 2.5V, 4.5V 6mOhm @ 16A, 4.5V Surface Mount 1.5V @ 250µA 80 nC @ 4.5 V 20 V ±12V 5914 pF @ 10 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
共 1251 条记录«上一页1... 8283848586878889...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户