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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RF1S70N06SM9A

RF1S70N06SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,600 -
RF1S70N06SM9A

数据表

PSPICE® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 14mOhm @ 70A, 10V Surface Mount 4V @ 250µA 215 nC @ 20 V 60 V ±20V 3000 pF @ 25 V - - TO-263AB - 150W (Tc) -55°C ~ 175°C (TJ)
SSF10N80A

SSF10N80A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,381 -
SSF10N80A

数据表

- TO-3P-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 950mOhm @ 3A, 10V Through Hole 3.5V @ 250µA 165 nC @ 10 V 800 V ±30V 3500 pF @ 25 V - - TO-3PF - 100W (Tc) -55°C ~ 150°C (TJ)
IRFS350A

IRFS350A

MOSFET N-CH 400V 11.5A TO3PF

Fairchild Semiconductor

188 -
IRFS350A

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Tc) 10V 300mOhm @ 5.75A, 10V Through Hole 4V @ 250µA 131 nC @ 10 V 400 V ±30V 2780 pF @ 25 V - - TO-3PF - 92W (Tc) -55°C ~ 150°C (TJ)
FDP8440

FDP8440

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

17,309 -
FDP8440

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.2mOhm @ 80A, 10V Through Hole 3V @ 250µA 450 nC @ 10 V 40 V ±20V 24740 pF @ 25 V - - TO-220-3 - 306W (Tc) -55°C ~ 175°C (TJ)
HUF75945G3

HUF75945G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,000 -
HUF75945G3

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 71mOhm @ 38A, 10V Through Hole 4V @ 250µA 280 nC @ 20 V 200 V ±20V 4023 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 175°C (TJ)
HUF75939S3ST

HUF75939S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

800 -
HUF75939S3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 125mOhm @ 22A, 10V Surface Mount 4V @ 250µA 152 nC @ 20 V 200 V ±20V 2200 pF @ 25 V - - TO-263 (D2PAK) - 180W (Tc) -55°C ~ 175°C (TJ)
HUFA75344G3

HUFA75344G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor

89,420 -
HUFA75344G3

数据表

UltraFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Through Hole 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-247 - 285W (Tc) -55°C ~ 175°C (TJ)
FDS3570

FDS3570

MOSFET N-CH 80V 9A 8SOIC

Fairchild Semiconductor

78,778 -
FDS3570

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 6V, 10V 20mOhm @ 9A, 10V Surface Mount 4V @ 250µA 76 nC @ 10 V 80 V ±20V 2750 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDAF62N28

FDAF62N28

MOSFET N-CH 280V 36A TO3PF

Fairchild Semiconductor

1,135 -
FDAF62N28

数据表

UniFET™ TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 51mOhm @ 18A, 10V Through Hole 5V @ 250µA 100 nC @ 10 V 280 V ±30V 4630 pF @ 25 V - - TO-3PF - 165W (Tc) -55°C ~ 150°C (TJ)
FQAF70N15

FQAF70N15

MOSFET N-CH 150V 44A TO3PF

Fairchild Semiconductor

925 -
FQAF70N15

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 28mOhm @ 22A, 10V Through Hole 4V @ 250µA 175 nC @ 10 V 150 V ±25V 5400 pF @ 25 V - - TO-3PF - 130W (Tc) -55°C ~ 175°C (TJ)
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