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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDB2570

FDB2570

MOSFET N-CH 150V 22A TO263AB

Fairchild Semiconductor

4,529 -
FDB2570

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 6V, 10V 80mOhm @ 11A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 150 V ±20V 1911 pF @ 75 V - - TO-263 (D2PAK) - 93W (Tc) -65°C ~ 175°C (TJ)
HRF3205

HRF3205

MOSFET N-CH 55V 100A TO220-3

Fairchild Semiconductor

80,660 -
HRF3205

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) - 8mOhm @ 59A, 10V Through Hole 4V @ 250µA 170 nC @ 10 V 55 V ±20V 4000 pF @ 25 V - - TO-220-3 - 175W (Tc) -55°C ~ 175°C (TJ)
ISL9N304AS3ST

ISL9N304AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200 -
ISL9N304AS3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V Surface Mount 3V @ 250µA 105 nC @ 10 V 30 V ±20V 4075 pF @ 15 V - - TO-263AB - 145W (Ta) -55°C ~ 175°C (TJ)
FQA8N80

FQA8N80

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

72,211 -
FQA8N80

数据表

QFET® TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 10V 1.2Ohm @ 4.2A, 10V Through Hole 5V @ 250µA 57 nC @ 10 V 800 V ±30V 2350 pF @ 25 V - - TO-3P - 220W (Tc) -55°C ~ 150°C (TJ)
FQA12N60

FQA12N60

MOSFET N-CH 600V 12A TO3P

Fairchild Semiconductor

9,750 -
FQA12N60

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 700mOhm @ 6A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-3P - 240W (Tc) -55°C ~ 150°C (TJ)
FDP2670

FDP2670

MOSFET N-CH 200V 19A TO220-3

Fairchild Semiconductor

4,242 -
FDP2670

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 130mOhm @ 10A, 10V Through Hole 4.5V @ 250µA 38 nC @ 10 V 200 V ±20V 1320 pF @ 100 V - - TO-220-3 - 93W (Tc) -65°C ~ 175°C (TJ)
FQP4N90

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

Fairchild Semiconductor

2,156 -
FQP4N90

数据表

QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 900 V ±30V 1100 pF @ 25 V - - TO-220-3 - 140W (Tc) -55°C ~ 150°C (TJ)
FQAF7N90

FQAF7N90

MOSFET N-CH 900V 5.2A TO3PF

Fairchild Semiconductor

877 -
FQAF7N90

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.2A (Tc) 10V 1.55Ohm @ 2.6A, 10V Through Hole 5V @ 250µA 59 nC @ 10 V 900 V ±30V 2280 pF @ 25 V - - TO-3PF - 107W (Tc) -55°C ~ 150°C (TJ)
FCPF11N65

FCPF11N65

TRANS MOSFET N-CH 600V 11A 3PIN(

Fairchild Semiconductor

415 -
FCPF11N65

数据表

SuperFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 11A (Tc) - 380mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 650 V - 1490 pF @ 25 V - - TO-220F - 36W (Tc) -
HUF75542S3S

HUF75542S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

400 -
HUF75542S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 14mOhm @ 75A, 10V Surface Mount 4V @ 250µA 180 nC @ 20 V 80 V ±20V 2750 pF @ 25 V - - TO-263 (D2PAK) - 230W (Tc) -55°C ~ 175°C (TJ)
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