| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDI8442MOSFET N-CH 40V 23A/80A I2PAK Fairchild Semiconductor |
6,224 | - |
|
数据表 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Ta), 80A (Tc) | 10V | 2.9mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 235 nC @ 10 V | 40 V | ±20V | 12200 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 254W (Tc) | -55°C ~ 175°C (TJ) |
|
FQPF18N50V2SDTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,950 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tj) | 10V | 265mOhm @ 9A, 10V | Through Hole | 5V @ 250µA | 55 nC @ 10 V | 500 V | ±30V | 3290 pF @ 25 V | - | - | TO-220F-3 | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
FDP5690MOSFET N-CH 60V 32A TO220-3 Fairchild Semiconductor |
4,280 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 6V, 10V | 27mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 33 nC @ 10 V | 60 V | ±20V | 1120 pF @ 25 V | - | - | TO-220-3 | - | 58W (Tc) | -65°C ~ 175°C (TJ) |
|
FQI47P06TUMOSFET P-CH 60V 47A I2PAK Fairchild Semiconductor |
2,217 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 26mOhm @ 23.5A, 10V | Through Hole | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±25V | 3600 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.75W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FDW264PMOSFET P-CH 20V 9.7A 8TSSOP Fairchild Semiconductor |
1,494 | - |
|
数据表 |
- | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.7A (Ta) | 2.5V, 4.5V | 10mOhm @ 9.7A, 4.5V | Surface Mount | 1.5V @ 250µA | 135 nC @ 5 V | 20 V | ±12V | 7225 pF @ 10 V | - | - | 8-TSSOP | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
FQB46N15TMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
570 | - |
|
数据表 |
QFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 45.6A (Tc) | 10V | 42mOhm @ 22.8A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 150 V | ±25V | 3250 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.75W (Ta), 210W (Tc) | -55°C ~ 175°C (TJ) |
|
FQPF32N12V2MOSFET N-CH 120V 32A TO220F Fairchild Semiconductor |
83,103 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 53 nC @ 10 V | 120 V | ±30V | 1860 pF @ 25 V | - | - | TO-220F-3 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
FQA10N80MOSFET N-CH 800V 9.8A TO3P Fairchild Semiconductor |
9,066 | - |
|
数据表 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.8A (Tc) | 10V | 1.05Ohm @ 4.9A, 10V | Through Hole | 5V @ 250µA | 71 nC @ 10 V | 800 V | ±30V | 2700 pF @ 25 V | - | - | TO-3P | - | 240W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB7N65CTMMOSFET N-CH 650V 7A D2PAK Fairchild Semiconductor |
7,686 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 36 nC @ 10 V | 650 V | ±30V | 1245 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 173W (Tc) | -55°C ~ 150°C (TJ) |
|
FDU8770MOSFET N-CH 25V 35A IPAK Fairchild Semiconductor |
7,050 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | Through Hole | 2.5V @ 250µA | 73 nC @ 10 V | 25 V | ±20V | 3720 pF @ 13 V | - | - | IPAK | - | 115W (Tc) | -55°C ~ 175°C (TJ) |