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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDI8442

FDI8442

MOSFET N-CH 40V 23A/80A I2PAK

Fairchild Semiconductor

6,224 -
FDI8442

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V Through Hole 4V @ 250µA 235 nC @ 10 V 40 V ±20V 12200 pF @ 25 V - - TO-262 (I2PAK) - 254W (Tc) -55°C ~ 175°C (TJ)
FQPF18N50V2SDTU

FQPF18N50V2SDTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,950 -
FQPF18N50V2SDTU

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tj) 10V 265mOhm @ 9A, 10V Through Hole 5V @ 250µA 55 nC @ 10 V 500 V ±30V 3290 pF @ 25 V - - TO-220F-3 - 69W (Tc) -55°C ~ 150°C (TJ)
FDP5690

FDP5690

MOSFET N-CH 60V 32A TO220-3

Fairchild Semiconductor

4,280 -
FDP5690

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 6V, 10V 27mOhm @ 16A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 60 V ±20V 1120 pF @ 25 V - - TO-220-3 - 58W (Tc) -65°C ~ 175°C (TJ)
FQI47P06TU

FQI47P06TU

MOSFET P-CH 60V 47A I2PAK

Fairchild Semiconductor

2,217 -
FQI47P06TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 26mOhm @ 23.5A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 60 V ±25V 3600 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ)
FDW264P

FDW264P

MOSFET P-CH 20V 9.7A 8TSSOP

Fairchild Semiconductor

1,494 -
FDW264P

数据表

- 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 9.7A (Ta) 2.5V, 4.5V 10mOhm @ 9.7A, 4.5V Surface Mount 1.5V @ 250µA 135 nC @ 5 V 20 V ±12V 7225 pF @ 10 V - - 8-TSSOP - 1.3W (Ta) -55°C ~ 150°C (TJ)
FQB46N15TM

FQB46N15TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

570 -
FQB46N15TM

数据表

QFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 45.6A (Tc) 10V 42mOhm @ 22.8A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 150 V ±25V 3250 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 210W (Tc) -55°C ~ 175°C (TJ)
FQPF32N12V2

FQPF32N12V2

MOSFET N-CH 120V 32A TO220F

Fairchild Semiconductor

83,103 -
FQPF32N12V2

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 50mOhm @ 16A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 120 V ±30V 1860 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 175°C (TJ)
FQA10N80

FQA10N80

MOSFET N-CH 800V 9.8A TO3P

Fairchild Semiconductor

9,066 -
FQA10N80

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.8A (Tc) 10V 1.05Ohm @ 4.9A, 10V Through Hole 5V @ 250µA 71 nC @ 10 V 800 V ±30V 2700 pF @ 25 V - - TO-3P - 240W (Tc) -55°C ~ 150°C (TJ)
FQB7N65CTM

FQB7N65CTM

MOSFET N-CH 650V 7A D2PAK

Fairchild Semiconductor

7,686 -
FQB7N65CTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V Surface Mount 4V @ 250µA 36 nC @ 10 V 650 V ±30V 1245 pF @ 25 V - - TO-263 (D2PAK) - 173W (Tc) -55°C ~ 150°C (TJ)
FDU8770

FDU8770

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

7,050 -
FDU8770

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 73 nC @ 10 V 25 V ±20V 3720 pF @ 13 V - - IPAK - 115W (Tc) -55°C ~ 175°C (TJ)
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