| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDZ7064SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
27,000 | - |
|
数据表 |
PowerTrench® | 30-WFBGA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13.5A (Ta) | 4.5V, 10V | 7mOhm @ 13.5A, 10V | Surface Mount | 3V @ 1mA | 35 nC @ 5 V | 30 V | ±16V | 2840 pF @ 15 V | - | - | 30-BGA (3.5x4) | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) |
|
FQB85N06TMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
21,566 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 10V | 10mOhm @ 42.5A, 10V | Surface Mount | 4V @ 250µA | 112 nC @ 10 V | 60 V | ±25V | 4120 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.75W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) |
|
FDP10AN06A0MOSFET N-CH 60V 12A/75A TO220-3 Fairchild Semiconductor |
5,110 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 75A (Tc) | 6V, 10V | 10.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 37 nC @ 10 V | 60 V | ±20V | 1840 pF @ 25 V | - | - | TO-220-3 | - | 135W (Tc) | -55°C ~ 175°C (TJ) |
|
FQP55N06MOSFET N-CH 60V 55A TO220-3 Fairchild Semiconductor |
3,427 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 10V | 20mOhm @ 27.5A, 10V | Through Hole | 4V @ 250µA | 46 nC @ 10 V | 60 V | ±25V | 1690 pF @ 25 V | - | - | TO-220-3 | - | 133W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI50N06LTUMOSFET N-CH 60V 52.4A I2PAK Fairchild Semiconductor |
1,730 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 52.4A (Tc) | 5V, 10V | 21mOhm @ 26.2A, 10V | Through Hole | 2.5V @ 250µA | 32 nC @ 5 V | 60 V | ±20V | 1630 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.75W (Ta), 121W (Tc) | -55°C ~ 175°C (TJ) |
|
FQA7N80MOSFET N-CH 800V 7.2A TO3P Fairchild Semiconductor |
752 | - |
|
数据表 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.2A (Tc) | 10V | 1.5Ohm @ 3.6A, 10V | Through Hole | 5V @ 250µA | 52 nC @ 10 V | 800 V | ±30V | 1850 pF @ 25 V | - | - | TO-3P | - | 198W (Tc) | -55°C ~ 150°C (TJ) |
|
FQI12N60TUMOSFET N-CH 600V 10.5A I2PAK Fairchild Semiconductor |
627 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | Through Hole | 5V @ 250µA | 54 nC @ 10 V | 600 V | ±30V | 1900 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMS2508SDCMOSFET N-CH 25V 34A/49A DLCOOL56 Fairchild Semiconductor |
31,736 | - |
|
数据表 |
Dual Cool™, PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | Surface Mount | 3V @ 1mA | 69 nC @ 10 V | 25 V | ±20V | 4515 pF @ 13 V | - | - | 8-PQFN (5x6) | - | 3.3W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) |
|
FDB6035ALN-CHANNEL POWER MOSFET Fairchild Semiconductor |
172,284 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 48A (Ta) | 4.5V, 10V | 12mOhm @ 24A, 10V | Surface Mount | 3V @ 250µA | 18 nC @ 5 V | 30 V | ±20V | 1250 pF @ 15 V | - | - | TO-263AB | - | 52W (Tc) | -65°C ~ 175°C (TJ) |
|
FDD2570MOSFET N-CH 150V 4.7A TO252 Fairchild Semiconductor |
84,908 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.7A (Ta) | 6V, 10V | 80mOhm @ 4.7A, 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 150 V | ±20V | 1907 pF @ 75 V | - | - | TO-252 (DPAK) | - | 3.2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) |