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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDZ7064S

FDZ7064S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

27,000 -
FDZ7064S

数据表

PowerTrench® 30-WFBGA Bulk Active N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 7mOhm @ 13.5A, 10V Surface Mount 3V @ 1mA 35 nC @ 5 V 30 V ±16V 2840 pF @ 15 V - - 30-BGA (3.5x4) - 2.2W (Ta) -55°C ~ 150°C (TJ)
FQB85N06TM

FQB85N06TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

21,566 -
FQB85N06TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 10V 10mOhm @ 42.5A, 10V Surface Mount 4V @ 250µA 112 nC @ 10 V 60 V ±25V 4120 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ)
FDP10AN06A0

FDP10AN06A0

MOSFET N-CH 60V 12A/75A TO220-3

Fairchild Semiconductor

5,110 -
FDP10AN06A0

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 75A (Tc) 6V, 10V 10.5mOhm @ 75A, 10V Through Hole 4V @ 250µA 37 nC @ 10 V 60 V ±20V 1840 pF @ 25 V - - TO-220-3 - 135W (Tc) -55°C ~ 175°C (TJ)
FQP55N06

FQP55N06

MOSFET N-CH 60V 55A TO220-3

Fairchild Semiconductor

3,427 -
FQP55N06

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 20mOhm @ 27.5A, 10V Through Hole 4V @ 250µA 46 nC @ 10 V 60 V ±25V 1690 pF @ 25 V - - TO-220-3 - 133W (Tc) -55°C ~ 175°C (TJ)
FQI50N06LTU

FQI50N06LTU

MOSFET N-CH 60V 52.4A I2PAK

Fairchild Semiconductor

1,730 -
FQI50N06LTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V Through Hole 2.5V @ 250µA 32 nC @ 5 V 60 V ±20V 1630 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 121W (Tc) -55°C ~ 175°C (TJ)
FQA7N80

FQA7N80

MOSFET N-CH 800V 7.2A TO3P

Fairchild Semiconductor

752 -
FQA7N80

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.2A (Tc) 10V 1.5Ohm @ 3.6A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 800 V ±30V 1850 pF @ 25 V - - TO-3P - 198W (Tc) -55°C ~ 150°C (TJ)
FQI12N60TU

FQI12N60TU

MOSFET N-CH 600V 10.5A I2PAK

Fairchild Semiconductor

627 -
FQI12N60TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ)
FDMS2508SDC

FDMS2508SDC

MOSFET N-CH 25V 34A/49A DLCOOL56

Fairchild Semiconductor

31,736 -
FDMS2508SDC

数据表

Dual Cool™, PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 34A (Ta), 49A (Tc) 4.5V, 10V 1.95mOhm @ 28A, 10V Surface Mount 3V @ 1mA 69 nC @ 10 V 25 V ±20V 4515 pF @ 13 V - - 8-PQFN (5x6) - 3.3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
FDB6035AL

FDB6035AL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

172,284 -
FDB6035AL

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 48A (Ta) 4.5V, 10V 12mOhm @ 24A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1250 pF @ 15 V - - TO-263AB - 52W (Tc) -65°C ~ 175°C (TJ)
FDD2570

FDD2570

MOSFET N-CH 150V 4.7A TO252

Fairchild Semiconductor

84,908 -
FDD2570

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Ta) 6V, 10V 80mOhm @ 4.7A, 10V Surface Mount 4V @ 250µA 62 nC @ 10 V 150 V ±20V 1907 pF @ 75 V - - TO-252 (DPAK) - 3.2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ)
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