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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDZ208P

FDZ208P

MOSFET P-CH 30V 12.5A 30BGA

Fairchild Semiconductor

5,403 -
FDZ208P

数据表

PowerTrench® 30-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V Surface Mount 3V @ 250µA 35 nC @ 5 V 30 V ±25V 2409 pF @ 15 V - - 30-BGA (4x3.5) - 2.2W (Ta) -55°C ~ 150°C (TJ)
FDP6035AL

FDP6035AL

MOSFET N-CH 30V 48A TO220-3

Fairchild Semiconductor

106,637 -
FDP6035AL

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Ta) 4.5V, 10V 12mOhm @ 24A, 10V Through Hole 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1250 pF @ 15 V - - TO-220-3 - 52W (Tc) -65°C ~ 175°C (TJ)
FDW258P

FDW258P

MOSFET P-CH 12V 9A 8TSSOP

Fairchild Semiconductor

62,624 -
FDW258P

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 9A (Ta) 1.8V, 4.5V 11mOhm @ 9A, 4.5V Surface Mount 1.5V @ 250µA 73 nC @ 4.5 V 12 V ±8V 5049 pF @ 5 V - - 8-TSSOP - 1.3W (Ta) -55°C ~ 150°C (TJ)
FDU6644

FDU6644

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

39,382 -
FDU6644

数据表

PowerTrench® TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 67A (Ta) 4.5V, 10V 8.5mOhm @ 16A, 10V Through Hole 3V @ 250µA 35 nC @ 5 V 30 V ±16V 3087 pF @ 15 V - - TO-251 (IPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FQB6N60TM

FQB6N60TM

MOSFET N-CH 600V 6.2A D2PAK

Fairchild Semiconductor

18,992 -
FQB6N60TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 600 V ±30V 1000 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
HUFA75639S3ST

HUFA75639S3ST

56A, 100V, 0.025OHM, N-CHANNEL,

Fairchild Semiconductor

1,559 -
HUFA75639S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 10 V 100 V ±20V 2000 pF @ 25 V AEC-Q101 - TO-263AB (D2PAK) Automotive 200W (Tc) -55°C ~ 175°C (TJ)
HUF75637S3ST

HUF75637S3ST

MOSFET N-CH 100V 44A D2PAK

Fairchild Semiconductor

1,429 -
HUF75637S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Surface Mount 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
HUF75639S3S

HUF75639S3S

MOSFET N-CH 100V 56A D2PAK

Fairchild Semiconductor

20,586 -
HUF75639S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
FDMS8570SDC

FDMS8570SDC

28A, 25V, 0.0028OHM, N-CHANNEL,

Fairchild Semiconductor

8,053 -
FDMS8570SDC

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 28A, 10V Surface Mount 2.2V @ 1mA 42 nC @ 10 V 25 V ±12V 2825 pF @ 13 V - Schottky Diode (Body) Dual Cool™56 - 3.3W (Ta), 59W (Tc) -55°C ~ 150°C (TJ)
FCPF7N60NT

FCPF7N60NT

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

4,369 -
FCPF7N60NT

数据表

SupreMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 520mOhm @ 3.4A, 10V Through Hole 4V @ 250µA 35.6 nC @ 10 V 600 V ±30V 960 pF @ 100 V - - TO-220F-3 - 30.5W (Tc) -55°C ~ 150°C (TJ)
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