| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDZ208PMOSFET P-CH 30V 12.5A 30BGA Fairchild Semiconductor |
5,403 | - |
|
数据表 |
PowerTrench® | 30-WFBGA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12.5A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | Surface Mount | 3V @ 250µA | 35 nC @ 5 V | 30 V | ±25V | 2409 pF @ 15 V | - | - | 30-BGA (4x3.5) | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) |
|
FDP6035ALMOSFET N-CH 30V 48A TO220-3 Fairchild Semiconductor |
106,637 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 48A (Ta) | 4.5V, 10V | 12mOhm @ 24A, 10V | Through Hole | 3V @ 250µA | 18 nC @ 5 V | 30 V | ±20V | 1250 pF @ 15 V | - | - | TO-220-3 | - | 52W (Tc) | -65°C ~ 175°C (TJ) |
|
|
FDW258PMOSFET P-CH 12V 9A 8TSSOP Fairchild Semiconductor |
62,624 | - |
|
数据表 |
PowerTrench® | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9A (Ta) | 1.8V, 4.5V | 11mOhm @ 9A, 4.5V | Surface Mount | 1.5V @ 250µA | 73 nC @ 4.5 V | 12 V | ±8V | 5049 pF @ 5 V | - | - | 8-TSSOP | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
FDU6644N-CHANNEL POWER MOSFET Fairchild Semiconductor |
39,382 | - |
|
数据表 |
PowerTrench® | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 67A (Ta) | 4.5V, 10V | 8.5mOhm @ 16A, 10V | Through Hole | 3V @ 250µA | 35 nC @ 5 V | 30 V | ±16V | 3087 pF @ 15 V | - | - | TO-251 (IPAK) | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) |
|
FQB6N60TMMOSFET N-CH 600V 6.2A D2PAK Fairchild Semiconductor |
18,992 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | Surface Mount | 5V @ 250µA | 25 nC @ 10 V | 600 V | ±30V | 1000 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) |
|
HUFA75639S3ST56A, 100V, 0.025OHM, N-CHANNEL, Fairchild Semiconductor |
1,559 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | Surface Mount | 4V @ 250µA | 130 nC @ 10 V | 100 V | ±20V | 2000 pF @ 25 V | AEC-Q101 | - | TO-263AB (D2PAK) | Automotive | 200W (Tc) | -55°C ~ 175°C (TJ) |
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HUF75637S3STMOSFET N-CH 100V 44A D2PAK Fairchild Semiconductor |
1,429 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | Surface Mount | 4V @ 250µA | 108 nC @ 20 V | 100 V | ±20V | 1700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 155W (Tc) | -55°C ~ 175°C (TJ) |
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HUF75639S3SMOSFET N-CH 100V 56A D2PAK Fairchild Semiconductor |
20,586 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | Surface Mount | 4V @ 250µA | 130 nC @ 20 V | 100 V | ±20V | 2000 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
FDMS8570SDC28A, 25V, 0.0028OHM, N-CHANNEL, Fairchild Semiconductor |
8,053 | - |
|
数据表 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | Surface Mount | 2.2V @ 1mA | 42 nC @ 10 V | 25 V | ±12V | 2825 pF @ 13 V | - | Schottky Diode (Body) | Dual Cool™56 | - | 3.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) |
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FCPF7N60NTPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
4,369 | - |
|
数据表 |
SupreMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | Through Hole | 4V @ 250µA | 35.6 nC @ 10 V | 600 V | ±30V | 960 pF @ 100 V | - | - | TO-220F-3 | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) |