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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF75344A3

HUF75344A3

MOSFET N-CH 55V 75A TO3P

Fairchild Semiconductor

616 -
HUF75344A3

数据表

UltraFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Through Hole 4V @ 250µA 208 nC @ 20 V 55 V ±20V 4855 pF @ 25 V - - TO-3P - 288.5W (Tc) -55°C ~ 175°C (TJ)
FQB25N33TM

FQB25N33TM

MOSFET N-CH 330V 25A D2PAK

Fairchild Semiconductor

15,900 -
FQB25N33TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 230mOhm @ 12.5A, 10V Surface Mount 5V @ 250µA 75 nC @ 15 V 330 V ±30V 2010 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 250W (Tc) -55°C ~ 150°C (TJ)
FDMS0308CS

FDMS0308CS

MOSFET N-CH 30V 22A 8PQFN

Fairchild Semiconductor

9,000 -
FDMS0308CS

数据表

- 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) - 3mOhm @ 21A, 10V Surface Mount 3V @ 1mA 66 nC @ 10 V 30 V - 4225 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ)
RFG40N10

RFG40N10

MOSFET N-CH 100V 40A TO247-3

Fairchild Semiconductor

1,560 -
RFG40N10

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 40mOhm @ 40A, 10V Through Hole 4V @ 250µA 300 nC @ 20 V 100 V ±20V - - - TO-247 - 160W (Tc) -55°C ~ 175°C (TJ)
HUF76445S3ST

HUF76445S3ST

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor

385 -
HUF76445S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V Surface Mount 3V @ 250µA 150 nC @ 10 V 60 V ±16V 4965 pF @ 25 V - - TO-263 (D2PAK) - 310W (Tc) -55°C ~ 175°C (TJ)
HUF75343S3_NL

HUF75343S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

360 -
HUF75343S3_NL

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 9mOhm @ 75A, 10V Surface Mount 4V @ 250µA 205 nC @ 20 V 55 V ±20V 3000 pF @ 25 V - - TO-263 (D2PAK) - 270W (Tc) -55°C ~ 175°C (TJ)
FDD6680A

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

Fairchild Semiconductor

204,395 -
FDD6680A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V Surface Mount 3V @ 250µA 20 nC @ 5 V 30 V ±20V 1425 pF @ 15 V - - TO-252 (DPAK) - 2.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
FDD6680

FDD6680

MOSFET N-CH 30V 12A/46A DPAK

Fairchild Semiconductor

148,100 -
FDD6680

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 46A (Tc) 4.5V, 10V 10mOhm @ 12A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1230 pF @ 15 V - - TO-252 (DPAK) - 3.3W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
FDD6680S

FDD6680S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

31,202 -
FDD6680S

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55A (Ta) 4.5V, 10V 11mOhm @ 12.5A, 10V Surface Mount 3V @ 1mA 24 nC @ 5 V 30 V ±20V 2010 pF @ 15 V - - TO-252 (DPAK) - 1.3W (Ta) -55°C ~ 150°C (TJ)
FDS7088SN3

FDS7088SN3

MOSFET N-CH 30V 21A 8SO

Fairchild Semiconductor

10,000 -
FDS7088SN3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 4mOhm @ 21A, 10V Surface Mount 3V @ 1mA 80 nC @ 10 V 30 V ±20V 3230 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
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