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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQAF27N25

FQAF27N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,440 -
FQAF27N25

数据表

QFET® TO-3P-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 110mOhm @ 9.5A, 10V Through Hole 5V @ 250µA 65 nC @ 10 V 250 V ±30V 2450 pF @ 25 V - - TO-3PF - 95W (Tc) -55°C ~ 150°C (TJ)
FDU6692

FDU6692

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

62,279 -
FDU6692

数据表

PowerTrench® TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 54A (Ta) 4.5V, 10V 12mOhm @ 14A, 10V Through Hole 3V @ 250µA 25 nC @ 5 V 30 V ±16V 2164 pF @ 15 V - - TO-251 (IPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FDU6688

FDU6688

MOSFET N-CH 30V 84A IPAK

Fairchild Semiconductor

8,025 -
FDU6688

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V Through Hole 3V @ 250µA 56 nC @ 5 V 30 V ±20V 3845 pF @ 15 V - - IPAK - 83W (Ta) -55°C ~ 175°C (TJ)
FQB12N60TM

FQB12N60TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

6,990 -
FQB12N60TM

数据表

QFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V Surface Mount 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ)
FDD6688S

FDD6688S

MOSFET N-CH 30V 88A DPAK

Fairchild Semiconductor

6,966 -
FDD6688S

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 88A (Ta) 4.5V, 10V 5.1mOhm @ 18.5A, 10V Surface Mount 3V @ 1mA 81 nC @ 10 V 30 V ±20V 3290 pF @ 15 V - - TO-252 (DPAK) - 69W (Ta) -55°C ~ 150°C (TJ)
FDZ7064N

FDZ7064N

MOSFET N-CH 30V 13.5A 30BGA

Fairchild Semiconductor

6,000 -
FDZ7064N

数据表

PowerTrench® 30-WFBGA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 7mOhm @ 14.5A, 10V Surface Mount 2V @ 250µA 43 nC @ 4.5 V 30 V ±12V 3843 pF @ 15 V - - 30-BGA (4x3.5) - 2.2W (Ta) -55°C ~ 150°C (TJ)
FDS6685

FDS6685

MOSFET P-CH 30V 8.8A 8SOIC

Fairchild Semiconductor

5,000 -
FDS6685

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 8.8A (Ta) 4.5V, 10V 20mOhm @ 8.8A, 10V Surface Mount 3V @ 250µA 24 nC @ 5 V 30 V ±25V 1604 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
FQA34N20L

FQA34N20L

MOSFET N-CH 200V 34A TO3P

Fairchild Semiconductor

669 -
FQA34N20L

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 5V, 10V 75mOhm @ 17A, 10V Through Hole 2V @ 250µA 72 nC @ 5 V 200 V ±20V 3900 pF @ 25 V - - TO-3P - 210W (Tc) -55°C ~ 150°C (TJ)
FDB8160-F085

FDB8160-F085

80A, 30V, 0.0018OHM, N-CHANNEL,

Fairchild Semiconductor

8,800 -
FDB8160-F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 1.8mOhm @ 80A, 10V Surface Mount 4V @ 250µA 243 nC @ 10 V 30 V ±20V 11825 pF @ 15 V AEC-Q101 - TO-263AB Automotive 254W (Tc) -55°C ~ 175°C (TJ)
2SK4085LS-1E

2SK4085LS-1E

MOSFET N-CH 500V 11A TO220F-3FS

Fairchild Semiconductor

1,000 -
2SK4085LS-1E

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) - 430mOhm @ 8A, 10V Through Hole 5V @ 1mA 46.6 nC @ 10 V 500 V ±30V 1200 pF @ 30 V - - TO-220F-3FS - 2W (Ta), 40W (Tc) 150°C
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