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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQB70N08TMMOSFET N-CH 80V 70A D2PAK Fairchild Semiconductor |
1,180 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 17mOhm @ 35A, 10V | Surface Mount | 4V @ 250µA | 98 nC @ 10 V | 80 V | ±25V | 2700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.75W (Ta), 155W (Tc) | -55°C ~ 175°C (TJ) |
|
FDP10N60NZPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
5,771 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDS4435AMOSFET P-CH 30V 9A 8SOIC Fairchild Semiconductor |
991 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | Surface Mount | 2V @ 250µA | 30 nC @ 5 V | 30 V | ±20V | 2010 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDI9406_F085110A, 40V, 0.0022OHM, N-CHANNEL Fairchild Semiconductor |
400 | - |
|
数据表 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 2.2mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 138 nC @ 10 V | 40 V | ±20V | 7710 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 176W (Tj) | -55°C ~ 175°C (TJ) |
|
|
FDS7760AMOSFET N-CH 30V 15A 8SOIC Fairchild Semiconductor |
575,916 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 4.5V, 10V | 5.5mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 55 nC @ 5 V | 30 V | ±20V | 3514 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
FDP8443MOSFET N-CH 40V 20A/80A TO220-3 Fairchild Semiconductor |
11,938 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 185 nC @ 10 V | 40 V | ±20V | 9310 pF @ 25 V | - | - | TO-220-3 | - | 188W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI9N50CTUMOSFET N-CH 500V 9A I2PAK Fairchild Semiconductor |
39,199 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 800mOhm @ 4.5A, 10V | Through Hole | 4V @ 250µA | 35 nC @ 10 V | 500 V | ±30V | 1030 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 135W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP12N60MOSFET N-CH 600V 10.5A TO220-3 Fairchild Semiconductor |
9,664 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | Through Hole | 5V @ 250µA | 54 nC @ 10 V | 600 V | ±30V | 1900 pF @ 25 V | - | - | TO-220-3 | - | 180W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF13N50MOSFET N-CH 500V 12.5A TO220F Fairchild Semiconductor |
2,475 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12.5A (Tc) | 10V | 430mOhm @ 6.25A, 10V | Through Hole | 5V @ 250µA | 60 nC @ 10 V | 500 V | ±30V | 2300 pF @ 25 V | - | - | TO-220F-3 | - | 56W (Tc) | -55°C ~ 150°C (TJ) |
|
FQAF6N90MOSFET N-CH 900V 4.5A TO3PF Fairchild Semiconductor |
1,785 | - |
|
数据表 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.9Ohm @ 2.3A, 10V | Through Hole | 5V @ 250µA | 52 nC @ 10 V | 900 V | ±30V | 1880 pF @ 25 V | - | - | TO-3PF | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
