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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA75339P3

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor

2,440 -
HUFA75339P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 12mOhm @ 75A, 10V Through Hole 4V @ 250µA 130 nC @ 20 V 55 V ±20V 2000 pF @ 25 V - - TO-220-3 - 200W (Tc) -55°C ~ 175°C (TJ)
FDS7064N

FDS7064N

MOSFET N-CH 30V 16A 8SO

Fairchild Semiconductor

65,979 -
FDS7064N

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V 7.5mOhm @ 16A, 4.5V Surface Mount 2V @ 250µA 48 nC @ 4.5 V 30 V ±12V 3355 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FCPF600N60Z

FCPF600N60Z

MOSFET N-CH 600V 7.4A TO220F

Fairchild Semiconductor

152,000 -
FCPF600N60Z

数据表

SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V Through Hole 3.5V @ 250µA 26 nC @ 10 V 600 V ±20V 1120 pF @ 25 V - - TO-220F-3 - 89W (Tc) -55°C ~ 150°C (TJ)
HUF75639S3ST

HUF75639S3ST

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor

810 -
HUF75639S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
FDS7066ASN3

FDS7066ASN3

MOSFET N-CH 30V 19A 8SO

Fairchild Semiconductor

234,836 -
FDS7066ASN3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 4.5V, 10V 4.8mOhm @ 19A, 10V Surface Mount 3V @ 1mA 62 nC @ 10 V 30 V ±20V 2460 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FQPF2N90

FQPF2N90

MOSFET N-CH 900V 1.4A TO220F

Fairchild Semiconductor

52,651 -
FQPF2N90

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 7.2Ohm @ 700mA, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
FQPF13N50C

FQPF13N50C

QFC 500V 480MOHM TO220F

Fairchild Semiconductor

15,845 -
FQPF13N50C

数据表

QFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 480mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 500 V ±30V 2055 pF @ 25 V - - TO-220F - 48W (Tc) -55°C ~ 150°C (TJ)
FDP16N50

FDP16N50

MOSFET N-CH 500V 16A TO220-3

Fairchild Semiconductor

14,108 -
FDP16N50

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 380mOhm @ 8A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 500 V ±30V 1945 pF @ 25 V - - TO-220-3 - 200W (Tc) -55°C ~ 150°C (TJ)
FQB27N25TM

FQB27N25TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,200 -
FQB27N25TM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 25.5A (Tc) 10V 131mOhm @ 25.5A, 10V Surface Mount 5V @ 250µA 49 nC @ 10 V 250 V ±30V 1800 pF @ 25 V - - TO-263 (D2PAK) - 417W (Tj) -55°C ~ 150°C (TJ)
FDMS3008SDC

FDMS3008SDC

29A, 30V, 0.0026OHM, N-CHANNEL,

Fairchild Semiconductor

5,104 -
FDMS3008SDC

数据表

Dual Cool™, PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 29A (Ta) 4.5V, 10V 2.6mOhm @ 28A, 10V Surface Mount 3V @ 1mA 64 nC @ 10 V 30 V ±20V 4520 pF @ 15 V - - Dual Cool™56 - 3.3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
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