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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP70N08

FQP70N08

MOSFET N-CH 80V 70A TO220-3

Fairchild Semiconductor

797 -
FQP70N08

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 17mOhm @ 35A, 10V Through Hole 4V @ 250µA 98 nC @ 10 V 80 V ±25V 2700 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
FQPF3N90

FQPF3N90

MOSFET N-CH 900V 2.1A TO220F

Fairchild Semiconductor

53,159 -
FQPF3N90

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 4.25Ohm @ 1.05A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 900 V ±30V 910 pF @ 25 V - - TO-220F-3 - 43W (Tc) -55°C ~ 150°C (TJ)
HUF75842S3ST

HUF75842S3ST

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor

2,200 -
HUF75842S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 42mOhm @ 43A, 10V Surface Mount 4V @ 250µA 175 nC @ 20 V 150 V ±20V 2730 pF @ 25 V - - TO-263 (D2PAK) - 230W (Tc) -55°C ~ 175°C (TJ)
HUF75639S3_NL

HUF75639S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

655 -
HUF75639S3_NL

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
FDPF035N06B

FDPF035N06B

88A, 60V, 0.0035OHM, N CHANNEL ,

Fairchild Semiconductor

177,137 -
FDPF035N06B

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FQA6N70

FQA6N70

MOSFET N-CH 700V 6.4A TO3P

Fairchild Semiconductor

4,865 -
FQA6N70

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.4A (Tc) 10V 1.5Ohm @ 3.2A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 700 V ±30V 1400 pF @ 25 V - - TO-3P - 152W (Tc) -55°C ~ 150°C (TJ)
FQPF46N15

FQPF46N15

MOSFET N-CH 150V 25.6A TO220F

Fairchild Semiconductor

3,000 -
FQPF46N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 25.6A (Tc) 10V 42mOhm @ 12.8A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 150 V ±25V 3250 pF @ 25 V - - TO-220F-3 - 66W (Tc) -55°C ~ 175°C (TJ)
FQPF34N20L

FQPF34N20L

MOSFET N-CH 200V 17.5A TO220F

Fairchild Semiconductor

653 -
FQPF34N20L

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 5V, 10V 75mOhm @ 8.75A, 10V Through Hole 2V @ 250µA 72 nC @ 5 V 200 V ±20V 3900 pF @ 25 V - - TO-220F-3 - 55W (Tc) -55°C ~ 150°C (TJ)
FDP8860

FDP8860

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

15,367 -
FDP8860

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 2.5mOhm @ 80A, 10V Through Hole 2.5V @ 250µA 222 nC @ 10 V 30 V ±20V 12240 pF @ 15 V - - TO-220-3 - 254W (Tc) -55°C ~ 175°C (TJ)
HUF76437P3

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200 -
HUF76437P3

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Through Hole 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-220AB - 155W (Tc) -55°C ~ 175°C (TJ)
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