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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP3205

FDP3205

MOSFET N-CH 55V 100A TO220-3

Fairchild Semiconductor

2,285 -
FDP3205

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 7.5mOhm @ 59A, 10V Through Hole 5.5V @ 250µA 120 nC @ 10 V 55 V ±20V 7730 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
FQA6N80

FQA6N80

MOSFET N-CH 800V 6.3A TO3P

Fairchild Semiconductor

1,175 -
FQA6N80

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.3A (Tc) 10V 1.95Ohm @ 3.15A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 800 V ±30V 1500 pF @ 25 V - - TO-3P - 185W (Tc) -55°C ~ 150°C (TJ)
HUF75344P3_NL

HUF75344P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

312 -
HUF75344P3_NL

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Through Hole 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-220-3 - 285W (Tc) -55°C ~ 175°C (TJ)
FCI11N60

FCI11N60

MOSFET N-CH 600V 11A I2PAK

Fairchild Semiconductor

64,279 -
FCI11N60

数据表

SuperFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 600 V ±30V 1490 pF @ 25 V - - TO-262 (I2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
HUF75631P3

HUF75631P3

MOSFET N-CH 100V 33A TO220-3

Fairchild Semiconductor

16,024 -
HUF75631P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 40mOhm @ 33A, 10V Through Hole 4V @ 250µA 79 nC @ 20 V 100 V ±20V 1220 pF @ 25 V - - TO-220-3 - 120W (Tc) -55°C ~ 175°C (TJ)
HUFA76437S3ST

HUFA76437S3ST

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor

9,600 -
HUFA76437S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
FDD8444L

FDD8444L

MOSFET N-CH 40V 16A/50A TO252AA

Fairchild Semiconductor

58,951 -
FDD8444L

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 50A, 10V Surface Mount 3V @ 250µA 60 nC @ 5 V 40 V ±20V 5530 pF @ 25 V - - TO-252 (DPAK) - 153W (Tc) -55°C ~ 175°C (TJ)
FDB603AL

FDB603AL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

37,600 -
FDB603AL

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 30 V ±20V 670 pF @ 15 V - - TO-263AB - 50W (Tc) -65°C ~ 175°C (TJ)
FQP8N60C

FQP8N60C

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

5,143 -
FQP8N60C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 600 V ±30V 1255 pF @ 25 V - - TO-220-3 - 147W (Tc) -55°C ~ 150°C (TJ)
FQI9N25CTU

FQI9N25CTU

MOSFET N-CH 250V 8.8A I2PAK

Fairchild Semiconductor

2,000 -
FQI9N25CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
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