| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDP3205MOSFET N-CH 55V 100A TO220-3 Fairchild Semiconductor |
2,285 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 7.5mOhm @ 59A, 10V | Through Hole | 5.5V @ 250µA | 120 nC @ 10 V | 55 V | ±20V | 7730 pF @ 25 V | - | - | TO-220-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
FQA6N80MOSFET N-CH 800V 6.3A TO3P Fairchild Semiconductor |
1,175 | - |
|
数据表 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.3A (Tc) | 10V | 1.95Ohm @ 3.15A, 10V | Through Hole | 5V @ 250µA | 31 nC @ 10 V | 800 V | ±30V | 1500 pF @ 25 V | - | - | TO-3P | - | 185W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF75344P3_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
312 | - |
|
数据表 |
UltraFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 210 nC @ 20 V | 55 V | ±20V | 3200 pF @ 25 V | - | - | TO-220-3 | - | 285W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FCI11N60MOSFET N-CH 600V 11A I2PAK Fairchild Semiconductor |
64,279 | - |
|
数据表 |
SuperFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | Through Hole | 5V @ 250µA | 52 nC @ 10 V | 600 V | ±30V | 1490 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF75631P3MOSFET N-CH 100V 33A TO220-3 Fairchild Semiconductor |
16,024 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 40mOhm @ 33A, 10V | Through Hole | 4V @ 250µA | 79 nC @ 20 V | 100 V | ±20V | 1220 pF @ 25 V | - | - | TO-220-3 | - | 120W (Tc) | -55°C ~ 175°C (TJ) |
|
HUFA76437S3STMOSFET N-CH 60V 71A D2PAK Fairchild Semiconductor |
9,600 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 71A (Tc) | 4.5V, 10V | 14mOhm @ 71A, 10V | Surface Mount | 3V @ 250µA | 71 nC @ 10 V | 60 V | ±16V | 2230 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 155W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD8444LMOSFET N-CH 40V 16A/50A TO252AA Fairchild Semiconductor |
58,951 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | Surface Mount | 3V @ 250µA | 60 nC @ 5 V | 40 V | ±20V | 5530 pF @ 25 V | - | - | TO-252 (DPAK) | - | 153W (Tc) | -55°C ~ 175°C (TJ) |
|
FDB603ALN-CHANNEL POWER MOSFET Fairchild Semiconductor |
37,600 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 4.5V, 10V | 22mOhm @ 25A, 10V | Surface Mount | 3V @ 250µA | 26 nC @ 10 V | 30 V | ±20V | 670 pF @ 15 V | - | - | TO-263AB | - | 50W (Tc) | -65°C ~ 175°C (TJ) |
|
FQP8N60CPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
5,143 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | Through Hole | 4V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1255 pF @ 25 V | - | - | TO-220-3 | - | 147W (Tc) | -55°C ~ 150°C (TJ) |
|
FQI9N25CTUMOSFET N-CH 250V 8.8A I2PAK Fairchild Semiconductor |
2,000 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | Through Hole | 4V @ 250µA | 35 nC @ 10 V | 250 V | ±30V | 710 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |