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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDU8870

FDU8870

MOSFET N-CH 30V 21A/160A IPAK

Fairchild Semiconductor

65,675 -
FDU8870

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 118 nC @ 10 V 30 V ±20V 5160 pF @ 15 V - - IPAK - 160W (Tc) -55°C ~ 175°C (TJ)
FDD6670S

FDD6670S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

47,486 -
FDD6670S

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 64A (Ta) 4.5V, 10V 9mOhm @ 13.8A, 10V Surface Mount 3V @ 1mA 24 nC @ 10 V 30 V ±20V 2010 pF @ 15 V - - TO-252 (DPAK) - 1.3W (Ta) -55°C ~ 150°C
FDP13AN06A0

FDP13AN06A0

MOSFET N-CH 60V 10.9A/62A TO220

Fairchild Semiconductor

23,918 -
FDP13AN06A0

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 60 V ±20V 1350 pF @ 25 V - - TO-220-3 - 115W (Tc) -55°C ~ 175°C (TJ)
FDP6676

FDP6676

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

20,082 -
FDP6676

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 84A (Ta) 4.5V, 10V 6mOhm @ 42A, 10V Through Hole 3V @ 250µA 60 nC @ 5 V 30 V ±16V 5324 pF @ 15 V - - TO-220-3 - 93W (Tc) -65°C ~ 175°C (TJ)
FDP120AN15A0

FDP120AN15A0

MOSFET N-CH 150V 2.8A/14A TO220

Fairchild Semiconductor

9,998 -
FDP120AN15A0

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Ta), 14A (Tc) 6V, 10V 120mOhm @ 4A, 10V Through Hole 4V @ 250µA 14.5 nC @ 10 V 150 V ±20V 770 pF @ 25 V - - TO-220-3 - 65W (Tc) -55°C ~ 175°C (TJ)
HUF76132S3ST

HUF76132S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,600 -
HUF76132S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 11mOhm @ 75A, 10V Surface Mount 3V @ 250µA 52 nC @ 10 V 30 V ±20V 1650 pF @ 25 V - - TO-263AB - 120W (Tc) -40°C ~ 150°C (TJ)
FDB8870-F085

FDB8870-F085

MOSFET N-CH 30V 23A/160A D2PAK

Fairchild Semiconductor

4,800 -
FDB8870-F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 160A (Tc) - 3.9mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 132 nC @ 10 V 30 V ±20V 5200 pF @ 15 V AEC-Q101 - TO-263 (D2PAK) Automotive 160W (Tc) -55°C ~ 175°C (TJ)
FDD044AN03L

FDD044AN03L

MOSFET N-CH 30V 21A/35A TO252AA

Fairchild Semiconductor

4,060 -
FDD044AN03L

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 118 nC @ 10 V 30 V ±20V 5160 pF @ 15 V - - TO-252 (DPAK) - 160W (Tc) -55°C ~ 175°C (TJ)
HUF76132S3S

HUF76132S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,000 -
HUF76132S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 11mOhm @ 75A, 10V Surface Mount 3V @ 250µA 52 nC @ 10 V 30 V ±20V 1650 pF @ 25 V - - TO-263AB - 120W (Tc) -40°C ~ 150°C (TJ)
NDB6030PL

NDB6030PL

30A, 30V, 0.025OHM, P-CHANNEL,

Fairchild Semiconductor

3,647 -
NDB6030PL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active P-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 25mOhm @ 19A, 10V Surface Mount 2V @ 250µA 36 nC @ 5 V 30 V ±16V 1570 pF @ 15 V - - TO-263AB (D2PAK) - 75W (Tc) -65°C ~ 175°C (TJ)
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