| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDMS8660ASMOSFET N-CH 30V 28A/49A 8PQFN Fairchild Semiconductor |
132,816 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 49A (Tc) | 4.5V, 10V | 2.1mOhm @ 28A, 10V | Surface Mount | 3V @ 1mA | 83 nC @ 10 V | 30 V | ±20V | 5865 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |
|
NDS9435P-CHANNEL POWER MOSFET Fairchild Semiconductor |
20,000 | - |
|
数据表 |
SI9xxx | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 5.3A | - | - | Surface Mount | - | - | - | - | - | - | - | 8-SOIC | - | 2W | - |
|
RF1S50N06SM9AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
9,898 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | Surface Mount | 4V @ 250µA | 150 nC @ 20 V | 60 V | ±20V | 2020 pF @ 25 V | - | - | TO-263AB | - | 131W (Tc) | -55°C ~ 175°C (TJ) |
|
ISL9N306AD3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,400 | - |
|
数据表 |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | Through Hole | 3V @ 250µA | 90 nC @ 10 V | 30 V | ±20V | 3400 pF @ 15 V | - | - | IPAK | - | 125W (Ta) | -55°C ~ 175°C (TJ) |
|
HUF75631SK8N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,572 | - |
|
数据表 |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 10V | 39mOhm @ 5.5A, 10V | Surface Mount | 4V @ 250µA | 79 nC @ 20 V | 100 V | ±20V | 1225 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDS6680MOSFET N-CH 30V 11.5A 8SOIC Fairchild Semiconductor |
25,821 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | Surface Mount | 3V @ 250µA | 27 nC @ 5 V | 30 V | ±20V | 2070 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FQPF9N50YDTUMOSFET N-CH 500V 5.3A TO220F-3 Fairchild Semiconductor |
24,800 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 730mOhm @ 2.65A, 10V | Through Hole | 5V @ 250µA | 36 nC @ 10 V | 500 V | ±30V | 1450 pF @ 25 V | - | - | TO-220F-3 (Y-Forming) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS6670SSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
16,285 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | Surface Mount | 3V @ 1mA | 34 nC @ 5 V | 30 V | ±20V | 2674 pF @ 15 V | - | - | 8-SOIC | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
RF1S530SM9AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,640 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 160mOhm @ 8.3A, 10V | Surface Mount | 4V @ 250µA | 30 nC @ 10 V | 100 V | ±20V | 600 pF @ 25 V | - | - | TO-263AB | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
FQPF9N50TMOSFET N-CH 500V 5.3A TO220F Fairchild Semiconductor |
11,000 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 730mOhm @ 2.65A, 10V | Through Hole | 5V @ 250µA | 36 nC @ 10 V | 500 V | ±30V | 1450 pF @ 25 V | - | - | TO-220F-3 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |