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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS8660AS

FDMS8660AS

MOSFET N-CH 30V 28A/49A 8PQFN

Fairchild Semiconductor

132,816 -
FDMS8660AS

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta), 49A (Tc) 4.5V, 10V 2.1mOhm @ 28A, 10V Surface Mount 3V @ 1mA 83 nC @ 10 V 30 V ±20V 5865 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
NDS9435

NDS9435

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

20,000 -
NDS9435

数据表

SI9xxx 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 5.3A - - Surface Mount - - - - - - - 8-SOIC - 2W -
RF1S50N06SM9A

RF1S50N06SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,898 -
RF1S50N06SM9A

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 22mOhm @ 50A, 10V Surface Mount 4V @ 250µA 150 nC @ 20 V 60 V ±20V 2020 pF @ 25 V - - TO-263AB - 131W (Tc) -55°C ~ 175°C (TJ)
ISL9N306AD3

ISL9N306AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,400 -
ISL9N306AD3

数据表

UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V Through Hole 3V @ 250µA 90 nC @ 10 V 30 V ±20V 3400 pF @ 15 V - - IPAK - 125W (Ta) -55°C ~ 175°C (TJ)
HUF75631SK8

HUF75631SK8

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,572 -
HUF75631SK8

数据表

UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 79 nC @ 20 V 100 V ±20V 1225 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6680

FDS6680

MOSFET N-CH 30V 11.5A 8SOIC

Fairchild Semiconductor

25,821 -
FDS6680

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V Surface Mount 3V @ 250µA 27 nC @ 5 V 30 V ±20V 2070 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQPF9N50YDTU

FQPF9N50YDTU

MOSFET N-CH 500V 5.3A TO220F-3

Fairchild Semiconductor

24,800 -
FQPF9N50YDTU

数据表

QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220F-3 (Y-Forming) - 50W (Tc) -55°C ~ 150°C (TJ)
FDS6670S

FDS6670S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

16,285 -
FDS6670S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V Surface Mount 3V @ 1mA 34 nC @ 5 V 30 V ±20V 2674 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
RF1S530SM9A

RF1S530SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,640 -
RF1S530SM9A

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 160mOhm @ 8.3A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 100 V ±20V 600 pF @ 25 V - - TO-263AB - 79W (Tc) -55°C ~ 175°C (TJ)
FQPF9N50T

FQPF9N50T

MOSFET N-CH 500V 5.3A TO220F

Fairchild Semiconductor

11,000 -
FQPF9N50T

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
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