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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDD3580

FDD3580

MOSFET N-CH 80V 7.7A DPAK

Fairchild Semiconductor

8,500 -
FDD3580

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V Surface Mount 4V @ 250µA 49 nC @ 10 V 80 V ±20V 1760 pF @ 40 V - - TO-252 (DPAK) - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
FQB65N06TM

FQB65N06TM

MOSFET N-CH 60V 65A D2PAK

Fairchild Semiconductor

6,179 -
FQB65N06TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 16mOhm @ 32.5A, 10V Surface Mount 4V @ 250µA 65 nC @ 10 V 60 V ±25V 2410 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
HUF75329D3S

HUF75329D3S

MOSFET N-CH 55V 20A TO252AA

Fairchild Semiconductor

3,075 -
HUF75329D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 26mOhm @ 20A, 10V Surface Mount 4V @ 250µA 65 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - TO-252 (DPAK) - 128W (Tc) -55°C ~ 175°C (TJ)
FQI11N40TU

FQI11N40TU

MOSFET N-CH 400V 11.4A I2PAK

Fairchild Semiconductor

1,875 -
FQI11N40TU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 400 V ±30V 1400 pF @ 25 V - - I2PAK - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ)
HUF75339S3ST

HUF75339S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,450 -
HUF75339S3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 12mOhm @ 75A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 55 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
SI4467DY

SI4467DY

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,009 -
SI4467DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 13.5A (Ta) 1.8V, 4.5V 8.5mOhm @ 13.5A, 4.5V Surface Mount 1.5V @ 250µA 120 nC @ 4.5 V 20 V ±8V 8237 pF @ 10 V - - 8-SOIC - 1.2W (Ta) -55°C ~ 175°C (TJ)
FDS6614A

FDS6614A

MOSFET N-CH 30V 9.3A 8SOIC

Fairchild Semiconductor

20,000 -
FDS6614A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Ta) 4.5V, 10V 18mOhm @ 9.3A, 10V Surface Mount 3V @ 250µA 17 nC @ 5 V 30 V ±20V 1160 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUFA75344P3

HUFA75344P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor

1,054 -
HUFA75344P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Through Hole 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-220-3 - 285W (Tc) -55°C ~ 175°C (TJ)
FDD6676AS

FDD6676AS

MOSFET N-CH 30V 90A TO252

Fairchild Semiconductor

209,310 -
FDD6676AS

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 90A (Ta) 4.5V, 10V 5.7mOhm @ 16A, 10V Surface Mount 3V @ 1mA 64 nC @ 10 V 30 V ±20V 2500 pF @ 15 V - - TO-252 (DPAK) - 70W (Ta) -55°C ~ 150°C (TJ)
FQP2N60

FQP2N60

MOSFET N-CH 600V 2.4A TO220-3

Fairchild Semiconductor

84,915 -
FQP2N60

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 4.7Ohm @ 1.2A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 600 V ±30V 350 pF @ 25 V - - TO-220-3 - 64W (Tc) -55°C ~ 150°C (TJ)
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