| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQP6P25MOSFET P-CH 250V 6A TO220-3 Fairchild Semiconductor |
126,009 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | Through Hole | 5V @ 250µA | 27 nC @ 10 V | 250 V | ±30V | 780 pF @ 25 V | - | - | TO-220-3 | - | 90W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQI10N60CTUMOSFET N-CH 600V 9.5A I2PAK Fairchild Semiconductor |
55,208 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.5A (Tc) | 10V | 730mOhm @ 4.75A, 10V | Through Hole | 4V @ 250µA | 57 nC @ 10 V | 600 V | ±30V | 2040 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) |
|
FDR836PP-CHANNEL MOSFET Fairchild Semiconductor |
15,000 | - |
|
数据表 |
PowerTrench® | 8-LSOP (0.130", 3.30mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 6.1A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.1A, 4.5V | Surface Mount | 1V @ 250µA | 44 nC @ 4.5 V | 20 V | ±8V | 2200 pF @ 25 V | - | - | SuperSOT™-8 | - | 900mW (Ta) | -55°C ~ 150°C (TJ) |
|
FQPF6P25MOSFET P-CH 250V 4.2A TO220F Fairchild Semiconductor |
4,162 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.2A (Tc) | 10V | 1.1Ohm @ 2.1A, 10V | Through Hole | 5V @ 250µA | 27 nC @ 10 V | 250 V | ±30V | 780 pF @ 25 V | - | - | TO-220F-3 | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP11N40MOSFET N-CH 400V 11.4A TO220-3 Fairchild Semiconductor |
1,919 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 480mOhm @ 5.7A, 10V | Through Hole | 5V @ 250µA | 35 nC @ 10 V | 400 V | ±30V | 1400 pF @ 25 V | - | - | TO-220-3 | - | 147W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMS8690MOSFET N-CH 30V 14A/27A 8MLP Fairchild Semiconductor |
425,565 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 27A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 3V @ 250µA | 27 nC @ 10 V | 30 V | ±20V | 1680 pF @ 15 V | - | - | 8-MLP (5x6), Power56 | - | 2.5W (Ta), 37.8W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS4470POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
182,552 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12.5A (Ta) | 10V | 9mOhm @ 12.5A, 10V | Surface Mount | 5V @ 250µA | 63 nC @ 10 V | 40 V | +30V, -20V | 2659 pF @ 20 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) |
|
HUF76137P3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
13,040 | - |
|
数据表 |
UltraFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 9mOhm @ 75A, 10V | Through Hole | 3V @ 250µA | 72 nC @ 10 V | 30 V | ±20V | 2100 pF @ 25 V | - | - | TO-220AB | - | 145W (Tc) | -40°C ~ 150°C (TJ) |
|
FDB8896POWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor |
8,605 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | Surface Mount | 2.5V @ 250µA | 67 nC @ 10 V | 30 V | ±20V | 2525 pF @ 15 V | - | - | TO-263 (D2PAK) | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
FDU6696N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,600 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 50A (Tc) | 4.5V, 10V | 8mOhm @ 13A, 10V | Through Hole | 3V @ 250µA | 24 nC @ 5 V | 30 V | ±16V | 1715 pF @ 15 V | - | - | IPAK | - | 1.6W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) |