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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP6P25

FQP6P25

MOSFET P-CH 250V 6A TO220-3

Fairchild Semiconductor

126,009 -
FQP6P25

数据表

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.1Ohm @ 3A, 10V Through Hole 5V @ 250µA 27 nC @ 10 V 250 V ±30V 780 pF @ 25 V - - TO-220-3 - 90W (Tc) -55°C ~ 150°C (TJ)
FQI10N60CTU

FQI10N60CTU

MOSFET N-CH 600V 9.5A I2PAK

Fairchild Semiconductor

55,208 -
FQI10N60CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 730mOhm @ 4.75A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±30V 2040 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
FDR836P

FDR836P

P-CHANNEL MOSFET

Fairchild Semiconductor

15,000 -
FDR836P

数据表

PowerTrench® 8-LSOP (0.130", 3.30mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 6.1A (Ta) 2.5V, 4.5V 30mOhm @ 6.1A, 4.5V Surface Mount 1V @ 250µA 44 nC @ 4.5 V 20 V ±8V 2200 pF @ 25 V - - SuperSOT™-8 - 900mW (Ta) -55°C ~ 150°C (TJ)
FQPF6P25

FQPF6P25

MOSFET P-CH 250V 4.2A TO220F

Fairchild Semiconductor

4,162 -
FQPF6P25

数据表

QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 4.2A (Tc) 10V 1.1Ohm @ 2.1A, 10V Through Hole 5V @ 250µA 27 nC @ 10 V 250 V ±30V 780 pF @ 25 V - - TO-220F-3 - 45W (Tc) -55°C ~ 150°C (TJ)
FQP11N40

FQP11N40

MOSFET N-CH 400V 11.4A TO220-3

Fairchild Semiconductor

1,919 -
FQP11N40

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 400 V ±30V 1400 pF @ 25 V - - TO-220-3 - 147W (Tc) -55°C ~ 150°C (TJ)
FDMS8690

FDMS8690

MOSFET N-CH 30V 14A/27A 8MLP

Fairchild Semiconductor

425,565 -
FDMS8690

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 27A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V Surface Mount 3V @ 250µA 27 nC @ 10 V 30 V ±20V 1680 pF @ 15 V - - 8-MLP (5x6), Power56 - 2.5W (Ta), 37.8W (Tc) -55°C ~ 150°C (TJ)
FDS4470

FDS4470

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

182,552 -
FDS4470

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 12.5A (Ta) 10V 9mOhm @ 12.5A, 10V Surface Mount 5V @ 250µA 63 nC @ 10 V 40 V +30V, -20V 2659 pF @ 20 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
HUF76137P3

HUF76137P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

13,040 -
HUF76137P3

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V Through Hole 3V @ 250µA 72 nC @ 10 V 30 V ±20V 2100 pF @ 25 V - - TO-220AB - 145W (Tc) -40°C ~ 150°C (TJ)
FDB8896

FDB8896

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

8,605 -
FDB8896

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 93A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 67 nC @ 10 V 30 V ±20V 2525 pF @ 15 V - - TO-263 (D2PAK) - 80W (Tc) -55°C ~ 175°C (TJ)
FDU6696

FDU6696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,600 -
FDU6696

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V Through Hole 3V @ 250µA 24 nC @ 5 V 30 V ±16V 1715 pF @ 15 V - - IPAK - 1.6W (Ta), 52W (Tc) -55°C ~ 175°C (TJ)
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