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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQAF17P10

FQAF17P10

MOSFET P-CH 100V 12.4A TO3PF

Fairchild Semiconductor

2,972 -
FQAF17P10

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 12.4A (Tc) 10V 190mOhm @ 6.2A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 100 V ±30V 1100 pF @ 25 V - - TO-3PF - 56W (Tc) -55°C ~ 175°C (TJ)
FDU044AN03L

FDU044AN03L

MOSFET N-CH 30V 21A/35A IPAK

Fairchild Semiconductor

2,806 -
FDU044AN03L

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 118 nC @ 10 V 30 V ±20V 5160 pF @ 15 V - - IPAK - 160W (Tc) -55°C ~ 175°C (TJ)
FQI32N20CTU

FQI32N20CTU

MOSFET N-CH 200V 28A I2PAK

Fairchild Semiconductor

1,832 -
FQI32N20CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 82mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 200 V ±30V 2220 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
HUFA75333G3

HUFA75333G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,512 -
HUFA75333G3

数据表

UltraFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 66A (Tc) 10V 16mOhm @ 66A, 10V Through Hole 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-247 - 150W (Tc) -55°C ~ 175°C (TJ)
FDP6676S

FDP6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,485 -
FDP6676S

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 76A (Ta) 4.5V, 10V 6.5mOhm @ 38A, 10V Through Hole 3V @ 1mA 56 nC @ 5 V 30 V ±16V 4853 pF @ 15 V - - TO-220-3 - 70W (Tc) -55°C ~ 150°C (TJ)
FQPF9N50C

FQPF9N50C

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor

272,903 -
FQPF9N50C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) - 800mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 500 V ±30V 1030 pF @ 25 V - - TO-220-3 - 44W (Tc) -55°C ~ 150°C (TJ)
HUF76432S3ST

HUF76432S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,975 -
HUF76432S3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V Surface Mount 3V @ 250µA 53 nC @ 10 V 60 V ±16V 1765 pF @ 25 V - - TO-263 (D2PAK) - 130W (Tc) -55°C ~ 175°C (TJ)
IRFU120ATU

IRFU120ATU

MOSFET N-CH 100V 8.4A IPAK

Fairchild Semiconductor

2,580 -
IRFU120ATU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 10V 200mOhm @ 4.2A, 10V Through Hole 4V @ 250µA 22 nC @ 10 V 100 V - 480 pF @ 25 V - - IPAK - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
FDD26AN06A0

FDD26AN06A0

MOSFET N-CH 60V 7A/36A TO252AA

Fairchild Semiconductor

37,794 -
FDD26AN06A0

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta), 36A (Tc) 10V 26mOhm @ 36A, 10V Surface Mount 4V @ 250µA 17 nC @ 10 V 60 V ±20V 800 pF @ 25 V - - TO-252 (DPAK) - 75W (Tc) -55°C ~ 175°C (TJ)
HUF75939P3

HUF75939P3

MOSFET N-CH 200V 22A TO220-3

Fairchild Semiconductor

33,787 -
HUF75939P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 125mOhm @ 22A, 10V Through Hole 4V @ 250µA 152 nC @ 20 V 200 V ±20V 2200 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
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