| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQAF17P10MOSFET P-CH 100V 12.4A TO3PF Fairchild Semiconductor |
2,972 | - |
|
数据表 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12.4A (Tc) | 10V | 190mOhm @ 6.2A, 10V | Through Hole | 4V @ 250µA | 39 nC @ 10 V | 100 V | ±30V | 1100 pF @ 25 V | - | - | TO-3PF | - | 56W (Tc) | -55°C ~ 175°C (TJ) |
|
FDU044AN03LMOSFET N-CH 30V 21A/35A IPAK Fairchild Semiconductor |
2,806 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 35A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | Through Hole | 2.5V @ 250µA | 118 nC @ 10 V | 30 V | ±20V | 5160 pF @ 15 V | - | - | IPAK | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI32N20CTUMOSFET N-CH 200V 28A I2PAK Fairchild Semiconductor |
1,832 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 82mOhm @ 14A, 10V | Through Hole | 4V @ 250µA | 110 nC @ 10 V | 200 V | ±30V | 2220 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) |
|
HUFA75333G3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,512 | - |
|
数据表 |
UltraFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 66A (Tc) | 10V | 16mOhm @ 66A, 10V | Through Hole | 4V @ 250µA | 85 nC @ 20 V | 55 V | ±20V | 1300 pF @ 25 V | - | - | TO-247 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
FDP6676SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,485 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 76A (Ta) | 4.5V, 10V | 6.5mOhm @ 38A, 10V | Through Hole | 3V @ 1mA | 56 nC @ 5 V | 30 V | ±16V | 4853 pF @ 15 V | - | - | TO-220-3 | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF9N50CMOSFET N-CH 500V 9A TO220-3 Fairchild Semiconductor |
272,903 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | - | 800mOhm @ 4.5A, 10V | Through Hole | 4V @ 250µA | 35 nC @ 10 V | 500 V | ±30V | 1030 pF @ 25 V | - | - | TO-220-3 | - | 44W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF76432S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,975 | - |
|
数据表 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 4.5V, 10V | 17mOhm @ 59A, 10V | Surface Mount | 3V @ 250µA | 53 nC @ 10 V | 60 V | ±16V | 1765 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFU120ATUMOSFET N-CH 100V 8.4A IPAK Fairchild Semiconductor |
2,580 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.4A (Tc) | 10V | 200mOhm @ 4.2A, 10V | Through Hole | 4V @ 250µA | 22 nC @ 10 V | 100 V | - | 480 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) |
|
FDD26AN06A0MOSFET N-CH 60V 7A/36A TO252AA Fairchild Semiconductor |
37,794 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Ta), 36A (Tc) | 10V | 26mOhm @ 36A, 10V | Surface Mount | 4V @ 250µA | 17 nC @ 10 V | 60 V | ±20V | 800 pF @ 25 V | - | - | TO-252 (DPAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF75939P3MOSFET N-CH 200V 22A TO220-3 Fairchild Semiconductor |
33,787 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 125mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 152 nC @ 20 V | 200 V | ±20V | 2200 pF @ 25 V | - | - | TO-220-3 | - | 180W (Tc) | -55°C ~ 175°C (TJ) |