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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDS7766

FDS7766

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

11,245 -
FDS7766

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V Surface Mount 3V @ 250µA 69 nC @ 5 V 30 V ±16V 4973 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
FDS6689S

FDS6689S

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor

1,941 -
FDS6689S

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 5.4mOhm @ 16A, 10V Surface Mount 3V @ 1mA 78 nC @ 10 V 30 V ±20V 3290 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUFA75344S3S

HUFA75344S3S

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor

1,880 -
HUFA75344S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Surface Mount 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-263 (D2PAK) - 285W (Tc) -55°C ~ 175°C (TJ)
FQPF6N60

FQPF6N60

MOSFET N-CH 600V 3.6A TO220F

Fairchild Semiconductor

887 -
FQPF6N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.5Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 600 V ±30V 1000 pF @ 25 V - - TO-220F-3 - 44W (Tc) -55°C ~ 150°C (TJ)
FDMS8848NZ

FDMS8848NZ

MOSFET N-CH 40V 22.8A/49A 8PQFN

Fairchild Semiconductor

728 -
FDMS8848NZ

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 22.8A (Ta), 49A (Tc) 4.5V, 10V 3.1mOhm @ 22.8A, 10V Surface Mount 3V @ 250µA 152 nC @ 10 V 40 V ±20V 8075 pF @ 20 V - - 8-PQFN (5x6) - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
FQP14N30

FQP14N30

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

816 -
FQP14N30

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 14.4A (Tc) 10V 290mOhm @ 7.2A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 300 V ±30V 1360 pF @ 25 V - - TO-220-3 - 147W (Tc) -55°C ~ 150°C (TJ)
FQPF18N20V2YDTU

FQPF18N20V2YDTU

MOSFET N-CH 200V 18A TO220F-3

Fairchild Semiconductor

84,800 -
FQPF18N20V2YDTU

数据表

QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 9A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 200 V ±30V 1080 pF @ 25 V - - TO-220F-3 (Y-Forming) - 40W (Tc) -55°C ~ 150°C (TJ)
FQB32N12V2TM

FQB32N12V2TM

MOSFET N-CH 120V 32A D2PAK

Fairchild Semiconductor

49,600 -
FQB32N12V2TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 50mOhm @ 16A, 10V Surface Mount 4V @ 250µA 53 nC @ 10 V 120 V ±30V 1860 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
HUFA75344S3ST

HUFA75344S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor

29,655 -
HUFA75344S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Surface Mount 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-263 (D2PAK) - 285W (Tc) -55°C ~ 175°C (TJ)
FDD6682

FDD6682

MOSFET N-CH 30V 75A DPAK

Fairchild Semiconductor

26,043 -
FDD6682

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V Surface Mount 3V @ 250µA 31 nC @ 5 V 30 V ±20V 2400 pF @ 15 V - - TO-252 (DPAK) - 71W (Ta) -55°C ~ 175°C (TJ)
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