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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF75831SK8T

HUF75831SK8T

MOSFET N-CH 150V 3A 8SOIC

Fairchild Semiconductor

1,607 -
HUF75831SK8T

数据表

UltraFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 95mOhm @ 3A, 10V Surface Mount 4V @ 250µA 80 nC @ 20 V 150 V ±20V 1175 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQPF16N25

FQPF16N25

MOSFET N-CH 250V 9.5A TO220F

Fairchild Semiconductor

71,828 -
FQPF16N25

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 230mOhm @ 4.75A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 250 V ±30V 1200 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
HUFA76429D3ST

HUFA76429D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

38,555 -
HUFA76429D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 60 V ±16V 1480 pF @ 25 V - - TO-252 (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
FDZ7064AS

FDZ7064AS

MOSFET N-CH 30V 13.5A 30BGA

Fairchild Semiconductor

32,300 -
FDZ7064AS

数据表

PowerTrench® 30-WFBGA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 5.6mOhm @ 13.5A, 10V Surface Mount 3V @ 1mA 51 nC @ 10 V 30 V ±20V 1960 pF @ 15 V - - 30-BGA (4x3.5) - 2.2W (Ta) -55°C ~ 150°C (TJ)
FQPF9N50

FQPF9N50

MOSFET N-CH 500V 5.3A TO220F

Fairchild Semiconductor

32,000 -
FQPF9N50

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
RFP15N05L

RFP15N05L

MOSFET N-CH 50V 15A TO220-3

Fairchild Semiconductor

20,443 -
RFP15N05L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) - 140mOhm @ 15A, 5V Through Hole 2V @ 250µA - 50 V ±10V 900 pF @ 25 V - - TO-220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
HUFA75842P3

HUFA75842P3

MOSFET N-CH 150V 43A TO220-3

Fairchild Semiconductor

6,317 -
HUFA75842P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 42mOhm @ 43A, 10V Through Hole 4V @ 250µA 175 nC @ 20 V 150 V ±20V 2730 pF @ 25 V - - TO-220-3 - 230W (Tc) -55°C ~ 175°C (TJ)
HUF75545S3

HUF75545S3

MOSFET N-CH 80V 75A I2PAK

Fairchild Semiconductor

3,206 -
HUF75545S3

数据表

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 75A, 10V Through Hole 4V @ 250µA 235 nC @ 20 V 80 V ±20V 3750 pF @ 25 V - - TO-262 (I2PAK) - 270W (Tc) -55°C ~ 175°C (TJ)
IRF654BFP001

IRF654BFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,935 -
IRF654BFP001

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 140mOhm @ 10.5A, 10V Through Hole 4V @ 250µA 123 nC @ 10 V 250 V ±30V 3400 pF @ 25 V - - TO-220 - 156W (Tc) -55°C ~ 150°C (TJ)
FDPF7N50U

FDPF7N50U

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor

321,595 -
FDPF7N50U

数据表

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 16.6 nC @ 10 V 500 V ±30V 940 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
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