| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF76139P3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,582 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 7.5mOhm @ 75A, 10V | Through Hole | 3V @ 250µA | 78 nC @ 10 V | 30 V | ±20V | 2700 pF @ 25 V | - | - | TO-220-3 | - | 165W (Tc) | -40°C ~ 150°C (TJ) |
|
ISL9N322AS3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
8,800 | - |
|
数据表 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 22mOhm @ 35A, 10V | Surface Mount | 3V @ 250µA | 27 nC @ 10 V | 30 V | ±20V | 970 pF @ 15 V | - | - | TO-263AB | - | 50W (Ta) | -55°C ~ 175°C (TJ) |
|
FDS6690SSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
372,836 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 16mOhm @ 10A, 10V | Surface Mount | 3V @ 1mA | 16 nC @ 5 V | 30 V | ±20V | 1233 pF @ 15 V | - | - | 8-SOIC | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
FDZ294NMOSFET N-CH 20V 6A 9BGA Fairchild Semiconductor |
51,940 | - |
|
数据表 |
PowerTrench® | 9-VFBGA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 2.5V, 4.5V | 23mOhm @ 6A, 4.5V | Surface Mount | 1.5V @ 250µA | 10 nC @ 4.5 V | 20 V | ±12V | 670 pF @ 10 V | - | - | 9-BGA (1.5x1.6) | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
|
FQB9N50CFTMMOSFET N-CH 500V 9A D2PAK Fairchild Semiconductor |
9,738 | - |
|
数据表 |
FRFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | Surface Mount | 4V @ 250µA | 35 nC @ 10 V | 500 V | ±30V | 1030 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 173W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF6N70MOSFET N-CH 700V 3.5A TO220F Fairchild Semiconductor |
5,064 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 1.5Ohm @ 1.75A, 10V | Through Hole | 5V @ 250µA | 40 nC @ 10 V | 700 V | ±30V | 1400 pF @ 25 V | - | - | TO-220F-3 | - | 48W (Tc) | -55°C ~ 150°C (TJ) |
|
FDD6682_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,609 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Ta) | 4.5V, 10V | 6.2mOhm @ 17A, 10V | Surface Mount | 3V @ 250µA | 31 nC @ 5 V | 30 V | ±20V | 2400 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) |
|
HUF76145S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,706 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | Surface Mount | 3V @ 250µA | 156 nC @ 10 V | 30 V | ±20V | 4900 pF @ 25 V | - | - | TO-263AB | - | 270W (Tc) | -40°C ~ 150°C (TJ) |
|
FDU6682_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,078 | - |
|
数据表 |
PowerTrench® | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Ta) | 4.5V, 10V | 6.2mOhm @ 17A, 10V | Through Hole | 3V @ 250µA | 31 nC @ 5 V | 30 V | ±20V | 2400 pF @ 15 V | - | - | TO-251 (IPAK) | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) |
|
FQAF14N30MOSFET N-CH 300V 11.4A TO3PF Fairchild Semiconductor |
310 | - |
|
数据表 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 290mOhm @ 5.7A, 10V | Through Hole | 5V @ 250µA | 40 nC @ 10 V | 300 V | ±30V | 1360 pF @ 25 V | - | - | TO-3PF | - | 90W (Tc) | -55°C ~ 150°C (TJ) |