富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF76139P3

HUF76139P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,582 -
HUF76139P3

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V Through Hole 3V @ 250µA 78 nC @ 10 V 30 V ±20V 2700 pF @ 25 V - - TO-220-3 - 165W (Tc) -40°C ~ 150°C (TJ)
ISL9N322AS3ST

ISL9N322AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,800 -
ISL9N322AS3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 22mOhm @ 35A, 10V Surface Mount 3V @ 250µA 27 nC @ 10 V 30 V ±20V 970 pF @ 15 V - - TO-263AB - 50W (Ta) -55°C ~ 175°C (TJ)
FDS6690S

FDS6690S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

372,836 -
FDS6690S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 16mOhm @ 10A, 10V Surface Mount 3V @ 1mA 16 nC @ 5 V 30 V ±20V 1233 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
FDZ294N

FDZ294N

MOSFET N-CH 20V 6A 9BGA

Fairchild Semiconductor

51,940 -
FDZ294N

数据表

PowerTrench® 9-VFBGA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 2.5V, 4.5V 23mOhm @ 6A, 4.5V Surface Mount 1.5V @ 250µA 10 nC @ 4.5 V 20 V ±12V 670 pF @ 10 V - - 9-BGA (1.5x1.6) - 1.7W (Ta) -55°C ~ 150°C (TJ)
FQB9N50CFTM

FQB9N50CFTM

MOSFET N-CH 500V 9A D2PAK

Fairchild Semiconductor

9,738 -
FQB9N50CFTM

数据表

FRFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 850mOhm @ 4.5A, 10V Surface Mount 4V @ 250µA 35 nC @ 10 V 500 V ±30V 1030 pF @ 25 V - - TO-263 (D2PAK) - 173W (Tc) -55°C ~ 150°C (TJ)
FQPF6N70

FQPF6N70

MOSFET N-CH 700V 3.5A TO220F

Fairchild Semiconductor

5,064 -
FQPF6N70

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 700 V ±30V 1400 pF @ 25 V - - TO-220F-3 - 48W (Tc) -55°C ~ 150°C (TJ)
FDD6682_NL

FDD6682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,609 -
FDD6682_NL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V Surface Mount 3V @ 250µA 31 nC @ 5 V 30 V ±20V 2400 pF @ 15 V - - TO-252 (DPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
HUF76145S3ST

HUF76145S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,706 -
HUF76145S3ST

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V Surface Mount 3V @ 250µA 156 nC @ 10 V 30 V ±20V 4900 pF @ 25 V - - TO-263AB - 270W (Tc) -40°C ~ 150°C (TJ)
FDU6682_NL

FDU6682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,078 -
FDU6682_NL

数据表

PowerTrench® TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V Through Hole 3V @ 250µA 31 nC @ 5 V 30 V ±20V 2400 pF @ 15 V - - TO-251 (IPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FQAF14N30

FQAF14N30

MOSFET N-CH 300V 11.4A TO3PF

Fairchild Semiconductor

310 -
FQAF14N30

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 290mOhm @ 5.7A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 300 V ±30V 1360 pF @ 25 V - - TO-3PF - 90W (Tc) -55°C ~ 150°C (TJ)
共 1251 条记录«上一页1... 6465666768697071...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户