| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDMS8670MOSFET N-CH 30V 24A/42A 8PQFN Fairchild Semiconductor |
74,504 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Ta), 42A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | Surface Mount | 3V @ 250µA | 63 nC @ 10 V | 30 V | ±20V | 3940 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) |
|
ISL9N312AS3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
22,422 | - |
|
数据表 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 4.5V, 10V | 12mOhm @ 58A, 10V | Surface Mount | 3V @ 250µA | 38 nC @ 10 V | 30 V | ±20V | 1450 pF @ 15 V | - | - | TO-263AB | - | 75W (Ta) | -55°C ~ 175°C (TJ) |
|
FDMS8670ASMOSFET N-CH 30V 23A/42A 8PQFN Fairchild Semiconductor |
18,418 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Ta), 42A (Tc) | 4.5V, 10V | 3mOhm @ 23A, 10V | Surface Mount | 3V @ 1mA | 55 nC @ 10 V | 30 V | ±20V | 3615 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) |
|
FDZ209NMOSFET N-CH 60V 4A 12BGA Fairchild Semiconductor |
17,666 | - |
|
数据表 |
PowerTrench® | 12-WFBGA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 5V | 80mOhm @ 4A, 5V | Surface Mount | 3V @ 250µA | 9 nC @ 5 V | 60 V | ±20V | 657 pF @ 30 V | - | - | 12-BGA (2x2.5) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
FDU6680AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
7,200 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | Through Hole | 3V @ 250µA | 20 nC @ 5 V | 30 V | ±20V | 1425 pF @ 15 V | - | - | IPAK | - | 1.3W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF75823D3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,600 | - |
|
数据表 |
UltraFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 150mOhm @ 14A, 10V | Surface Mount | 4V @ 250µA | 54 nC @ 20 V | 150 V | ±20V | 800 pF @ 25 V | - | - | TO-252 (DPAK) | - | 85W (Tc) | -55°C ~ 175°C (TJ) |
|
FDU3580MOSFET N-CH 80V 7.7A IPAK Fairchild Semiconductor |
1,825 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.7A (Ta) | 6V, 10V | 29mOhm @ 7.7A, 10V | Through Hole | 4V @ 250µA | 79 nC @ 10 V | 80 V | ±20V | 1760 pF @ 40 V | - | - | IPAK | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD6670A_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,112 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 66A (Tc) | 4.5V, 10V | 8mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 22 nC @ 5 V | 30 V | ±20V | 1755 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.3W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) |
|
FDB6030BLMOSFET N-CH 30V 40A R-6 Fairchild Semiconductor |
49,600 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 5 V | 30 V | ±20V | 1160 pF @ 15 V | - | - | TO-263 (D2PAK) | - | 60W (Tc) | -65°C ~ 175°C (TJ) |
|
NDS8435AMOSFET P-CH 30V 7.9A 8SOIC Fairchild Semiconductor |
127,265 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.9A (Ta) | 4.5V, 10V | 23mOhm @ 7.9A, 10V | Surface Mount | 3V @ 250µA | 67 nC @ 10 V | 30 V | ±20V | 1800 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |