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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS8670

FDMS8670

MOSFET N-CH 30V 24A/42A 8PQFN

Fairchild Semiconductor

74,504 -
FDMS8670

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 42A (Tc) 4.5V, 10V 2.6mOhm @ 24A, 10V Surface Mount 3V @ 250µA 63 nC @ 10 V 30 V ±20V 3940 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
ISL9N312AS3ST

ISL9N312AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

22,422 -
ISL9N312AS3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 12mOhm @ 58A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1450 pF @ 15 V - - TO-263AB - 75W (Ta) -55°C ~ 175°C (TJ)
FDMS8670AS

FDMS8670AS

MOSFET N-CH 30V 23A/42A 8PQFN

Fairchild Semiconductor

18,418 -
FDMS8670AS

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 42A (Tc) 4.5V, 10V 3mOhm @ 23A, 10V Surface Mount 3V @ 1mA 55 nC @ 10 V 30 V ±20V 3615 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
FDZ209N

FDZ209N

MOSFET N-CH 60V 4A 12BGA

Fairchild Semiconductor

17,666 -
FDZ209N

数据表

PowerTrench® 12-WFBGA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 5V 80mOhm @ 4A, 5V Surface Mount 3V @ 250µA 9 nC @ 5 V 60 V ±20V 657 pF @ 30 V - - 12-BGA (2x2.5) - 2W (Ta) -55°C ~ 150°C (TJ)
FDU6680A

FDU6680A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,200 -
FDU6680A

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V Through Hole 3V @ 250µA 20 nC @ 5 V 30 V ±20V 1425 pF @ 15 V - - IPAK - 1.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
HUF75823D3S

HUF75823D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,600 -
HUF75823D3S

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 150mOhm @ 14A, 10V Surface Mount 4V @ 250µA 54 nC @ 20 V 150 V ±20V 800 pF @ 25 V - - TO-252 (DPAK) - 85W (Tc) -55°C ~ 175°C (TJ)
FDU3580

FDU3580

MOSFET N-CH 80V 7.7A IPAK

Fairchild Semiconductor

1,825 -
FDU3580

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V Through Hole 4V @ 250µA 79 nC @ 10 V 80 V ±20V 1760 pF @ 40 V - - IPAK - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
FDD6670A_NL

FDD6670A_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,112 -
FDD6670A_NL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 66A (Tc) 4.5V, 10V 8mOhm @ 15A, 10V Surface Mount 3V @ 250µA 22 nC @ 5 V 30 V ±20V 1755 pF @ 15 V - - TO-252 (DPAK) - 1.3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ)
FDB6030BL

FDB6030BL

MOSFET N-CH 30V 40A R-6

Fairchild Semiconductor

49,600 -
FDB6030BL

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V Surface Mount 3V @ 250µA 17 nC @ 5 V 30 V ±20V 1160 pF @ 15 V - - TO-263 (D2PAK) - 60W (Tc) -65°C ~ 175°C (TJ)
NDS8435A

NDS8435A

MOSFET P-CH 30V 7.9A 8SOIC

Fairchild Semiconductor

127,265 -
NDS8435A

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 7.9A (Ta) 4.5V, 10V 23mOhm @ 7.9A, 10V Surface Mount 3V @ 250µA 67 nC @ 10 V 30 V ±20V 1800 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
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