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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RF1K4915696

RF1K4915696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,500 -
RF1K4915696

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V Surface Mount 2V @ 250µA 65 nC @ 10 V 30 V ±10V 2030 pF @ 25 V - - 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
FDB4030L

FDB4030L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

13,600 -
FDB4030L

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 55mOhm @ 4.5A, 10V Surface Mount 2V @ 250µA 18 nC @ 10 V 30 V ±20V 365 pF @ 15 V - - TO-263AB - 37.5W (Tc) -65°C ~ 175°C (TJ)
FDD6676

FDD6676

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,182 -
FDD6676

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 78A (Ta) 4.5V, 10V 7.5mOhm @ 16.8A, 10V Surface Mount 3V @ 250µA 63 nC @ 5 V 30 V ±16V 5103 pF @ 15 V - - TO-252 (DPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FDU8586

FDU8586

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor

6,297 -
FDU8586

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 48 nC @ 10 V 20 V ±20V 2480 pF @ 10 V - - IPAK - 77W (Tc) -55°C ~ 175°C (TJ)
HUFA76419S3S

HUFA76419S3S

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor

4,000 -
HUFA76419S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V Surface Mount 3V @ 250µA 28 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-263 (D2PAK) - 75W (Tc) -55°C ~ 175°C (TJ)
HUF75925P3

HUF75925P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,400 -
HUF75925P3

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 275mOhm @ 11A, 10V Through Hole 4V @ 250µA 78 nC @ 20 V 200 V ±20V 1030 pF @ 25 V - - TO-220-3 - 100W (Tc) -55°C ~ 175°C (TJ)
FDD2612

FDD2612

MOSFET N-CH 200V 4.9A TO252

Fairchild Semiconductor

2,261 -
FDD2612

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.9A (Ta) 10V 720mOhm @ 1.5A, 10V Surface Mount 4.5V @ 250µA 11 nC @ 10 V 200 V ±20V 234 pF @ 100 V - - TO-252 (DPAK) - 42W (Ta) -55°C ~ 175°C (TJ)
FQPF28N15

FQPF28N15

MOSFET N-CH 150V 16.7A TO220F

Fairchild Semiconductor

1,904 -
FQPF28N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.7A (Tc) 10V 90mOhm @ 8.35A, 10V Through Hole 4V @ 250µA 52 nC @ 10 V 150 V ±25V 1600 pF @ 25 V - - TO-220F-3 - 60W (Tc) -55°C ~ 175°C (TJ)
FDS7096N3

FDS7096N3

MOSFET N-CH 30V 14A 8SOIC

Fairchild Semiconductor

47,500 -
FDS7096N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V Surface Mount 3V @ 250µA 22 nC @ 5 V 30 V ±20V 1587 pF @ 15 V - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
FDB6021P

FDB6021P

MOSFET P-CH 20V 28A TO263AB

Fairchild Semiconductor

21,255 -
FDB6021P

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 28A (Ta) 1.8V, 4.5V 30mOhm @ 14A, 4.5V Surface Mount 1.5V @ 250µA 28 nC @ 4.5 V 20 V ±8V 1890 pF @ 10 V - - TO-263 (D2PAK) - 37W (Tc) -65°C ~ 175°C (TJ)
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