富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP7N65C

FQP7N65C

MOSFET N-CH 650V 7A TO220-3

Fairchild Semiconductor

24,690 -
FQP7N65C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 650 V ±30V 1245 pF @ 25 V - - TO-220-3 - 160W (Tc) -55°C ~ 150°C (TJ)
IRLR130ATM

IRLR130ATM

MOSFET N-CH 100V 13A DPAK

Fairchild Semiconductor

20,775 -
IRLR130ATM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 5V 120mOhm @ 6.5A, 5V Surface Mount 2V @ 250µA 24 nC @ 5 V 100 V ±20V 755 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
FDD2512

FDD2512

MOSFET N-CH 150V 6.7A TO252

Fairchild Semiconductor

9,940 -
FDD2512

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Ta) 6V, 10V 420mOhm @ 2.2A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 150 V ±20V 344 pF @ 75 V - - TO-252 (DPAK) - 42W (Ta) -55°C ~ 175°C (TJ)
FDB4020P

FDB4020P

MOSFET P-CH 20V 16A TO263AB

Fairchild Semiconductor

5,926 -
FDB4020P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 2.5V, 4.5V 80mOhm @ 8A, 4.5V Surface Mount 1V @ 250µA 13 nC @ 4.5 V 20 V ±8V 665 pF @ 10 V - - TO-263 (D2PAK) - 37.5W (Tc) -65°C ~ 175°C (TJ)
FDP6035L

FDP6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,250 -
FDP6035L

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V Through Hole 3V @ 250µA 46 nC @ 10 V 30 V ±20V 1230 pF @ 15 V - - TO-220-3 - 75W (Tc) -65°C ~ 175°C (TJ)
ISL9N308AP3

ISL9N308AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200 -
ISL9N308AP3

数据表

UltraFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V Through Hole 3V @ 250µA 68 nC @ 10 V 30 V ±20V 2600 pF @ 15 V - - TO-220AB - 100W (Tc) -55°C ~ 175°C (TJ)
ISL9N308AS3ST

ISL9N308AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,400 -
ISL9N308AS3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V Surface Mount 3V @ 250µA 68 nC @ 10 V 30 V ±20V 2600 pF @ 15 V - - TO-263AB - 100W (Tc) -55°C ~ 175°C (TJ)
HUF75333P3

HUF75333P3

MOSFET N-CH 55V 66A TO220-3

Fairchild Semiconductor

97,924 -
HUF75333P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 10V 16mOhm @ 66A, 10V Through Hole 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
RF1K4915796

RF1K4915796

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

25,000 -
RF1K4915796

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta) 4.5V, 10V 30mOhm @ 6.3A, 10V Surface Mount 3V @ 250µA 88 nC @ 20 V 30 V ±20V 1575 pF @ 25 V - - 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
FDU8874

FDU8874

MOSFET N-CH 30V 18A/116A IPAK

Fairchild Semiconductor

5,400 -
FDU8874

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 2990 pF @ 15 V - - IPAK - 110W (Tc) -55°C ~ 175°C (TJ)
共 1251 条记录«上一页1... 5455565758596061...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户