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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF75332S3ST

HUF75332S3ST

MOSFET N-CH 55V 52A D2PAK

Fairchild Semiconductor

23,990 -
HUF75332S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 52A (Tc) - 19mOhm @ 52A, 10V Surface Mount 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 110W (Tc) -55°C ~ 175°C (TJ)
FQB7N30TM

FQB7N30TM

MOSFET N-CH 300V 7A D2PAK

Fairchild Semiconductor

10,034 -
FQB7N30TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 700mOhm @ 3.5A, 10V Surface Mount 5V @ 250µA 17 nC @ 10 V 300 V ±30V 610 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ)
FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

Fairchild Semiconductor

3,682 -
FQPF3N80

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 5Ohm @ 900mA, 10V Through Hole 5V @ 250µA 19 nC @ 10 V 800 V ±30V 690 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
FQI13N06LTU

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

Fairchild Semiconductor

2,955 -
FQI13N06LTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V Through Hole 2.5V @ 250µA 6.4 nC @ 5 V 60 V ±20V 350 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
RF1K49156

RF1K49156

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,660 -
RF1K49156

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V Surface Mount 2V @ 250µA 65 nC @ 10 V 30 V ±10V 2030 pF @ 25 V - - 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
IRFS240B

IRFS240B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,420 -
IRFS240B

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12.8A (Tc) 10V 180mOhm @ 6.4A, 10V Through Hole 4V @ 250µA 58 nC @ 10 V 200 V ±30V 1700 pF @ 25 V - - TO-220F - 73W (Tc) -55°C ~ 150°C (TJ)
FQAF33N10

FQAF33N10

MOSFET N-CH 100V 25.8A TO3PF

Fairchild Semiconductor

1,396 -
FQAF33N10

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 25.8A (Tc) 10V 52mOhm @ 12.9A, 10V Through Hole 4V @ 250µA 51 nC @ 10 V 100 V ±25V 1500 pF @ 25 V - - TO-3PF - 83W (Tc) -55°C ~ 175°C (TJ)
HUF75229P3

HUF75229P3

MOSFET N-CH 50V 44A TO220-3

Fairchild Semiconductor

161,050 -
HUF75229P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 22mOhm @ 44A, 10V Through Hole 4V @ 250µA 75 nC @ 20 V 50 V ±20V 1060 pF @ 25 V - - TO-220-3 - 90W (Tc) -55°C ~ 175°C (TJ)
FDMS8672S

FDMS8672S

MOSFET N-CH 30V 17A/35A 8PQFN

Fairchild Semiconductor

13,015 -
FDMS8672S

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 35A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V Surface Mount 3V @ 1mA 47 nC @ 10 V 30 V ±20V 2515 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FDR840P

FDR840P

MOSFET P-CH 20V 10A SUPERSOT8

Fairchild Semiconductor

177,354 -
FDR840P

数据表

- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 2.5V, 4.5V 12mOhm @ 10A, 4.5V Surface Mount 1.5V @ 250µA 60 nC @ 4.5 V 20 V ±12V 4481 pF @ 10 V - - SuperSOT™-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
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