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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA75321S3ST

HUFA75321S3ST

MOSFET N-CH 55V 35A D2PAK

Fairchild Semiconductor

16,000 -
HUFA75321S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 34mOhm @ 35A, 10V Surface Mount 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V - - TO-263 (D2PAK) - 93W (Tc) -55°C ~ 175°C (TJ)
HUFA75337S3ST

HUFA75337S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor

10,729 -
HUFA75337S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 14mOhm @ 75A, 10V Surface Mount 4V @ 250µA 109 nC @ 20 V 55 V ±20V 1775 pF @ 25 V - - TO-263 (D2PAK) - 175W (Tc) -55°C ~ 175°C (TJ)
FDD6770A

FDD6770A

24A, 25V, 0.004OHM, N-CHANNEL ,

Fairchild Semiconductor

4,705 -
FDD6770A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 50A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V Surface Mount 3V @ 250µA 47 nC @ 10 V 25 V ±20V 2405 pF @ 13 V - - TO-252 (DPAK) - 3.7W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
FDPF7N50F

FDPF7N50F

MOSFET N-CH 500V 6A TO220F

Fairchild Semiconductor

2,875 -
FDPF7N50F

数据表

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.15Ohm @ 3A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 500 V ±30V 960 pF @ 25 V - - TO-220F-3 - 38.5W (Tc) -55°C ~ 150°C (TJ)
FQPF9N50CT

FQPF9N50CT

MOSFET N-CH 500V 9A TO220F

Fairchild Semiconductor

261,000 -
FQPF9N50CT

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 800mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 500 V ±30V 1030 pF @ 25 V - - TO-220F-3 - 44W (Tc) -55°C ~ 150°C (TJ)
FDD6606

FDD6606

MOSFET N-CH 30V 75A DPAK

Fairchild Semiconductor

214,667 -
FDD6606

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 6mOhm @ 17A, 10V Surface Mount 3V @ 250µA 31 nC @ 5 V 30 V ±20V 2400 pF @ 15 V - - TO-252 (DPAK) - 71W (Tc) -55°C ~ 175°C (TJ)
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A I-PAK

Fairchild Semiconductor

83,995 -
FCU2250N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V Through Hole 4.5V @ 260µA 14 nC @ 10 V 800 V ±20V 585 pF @ 100 V - - IPAK - 39W (Tc) -55°C ~ 150°C (TJ)
FQB6N50TM

FQB6N50TM

MOSFET N-CH 500V 5.5A D2PAK

Fairchild Semiconductor

79,845 -
FQB6N50TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V Surface Mount 5V @ 250µA 22 nC @ 10 V 500 V ±30V 790 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
FDB6676

FDB6676

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

25,443 -
FDB6676

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 84A (Ta) 4.5V, 10V 6mOhm @ 42A, 10V Surface Mount 3V @ 250µA 60 nC @ 5 V 30 V ±16V 5324 pF @ 15 V - - TO-263AB - 93W (Tc) -65°C ~ 175°C (TJ)
FDS8670

FDS8670

MOSFET N-CH 30V 21A 8SOIC

Fairchild Semiconductor

25,418 -
FDS8670

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 3.7mOhm @ 21A, 10V Surface Mount 3V @ 250µA 82 nC @ 10 V 30 V ±20V 4040 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
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