Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 55

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDR844P MOSFET P-CH 20V 10A SUPERSOT8 Fairchild Semiconductor	4,078	-	询价单	数据表	-	8-TSOP (0.130", 3.30mm Width)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	1.8V, 4.5V	11mOhm @ 10A, 4.5V	Surface Mount	1.5V @ 250µA	74 nC @ 4.5 V	20 V	±8V	4951 pF @ 10 V	-	-	SuperSOT™-8	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
FDMC8676 MOSFET N-CH 30V 16A/18A POWER33 Fairchild Semiconductor	4,037	-	询价单	数据表	PowerTrench®	8-PowerTDFN	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 18A (Tc)	4.5V, 10V	5.9mOhm @ 14.7A, 10V	Surface Mount	3V @ 250µA	30 nC @ 10 V	30 V	±20V	1935 pF @ 15 V	-	-	Power33	-	2.3W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)
HUF76143S3 MOSFET N-CHANNEL 30V 75A Fairchild Semiconductor	4,000	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQI6N60CTU MOSFET N-CH 600V 5.5A I2PAK Fairchild Semiconductor	1,844	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	2Ohm @ 2.75A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	600 V	±30V	810 pF @ 25 V	-	-	TO-262 (I2PAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)
FQP6N50C MOSFET N-CH 500V 5.5A TO220-3 Fairchild Semiconductor	1,661	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 2.8A, 10V	Through Hole	4V @ 250µA	25 nC @ 10 V	500 V	±30V	700 pF @ 25 V	-	-	TO-220-3	-	98W (Tc)	-55°C ~ 150°C (TJ)
FDD5N50FTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,520	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	10V	1.55Ohm @ 1.75A, 10V	Surface Mount	5V @ 250µA	15 nC @ 10 V	500 V	±30V	650 pF @ 25 V	-	-	TO-252 (DPAK)	-	40W (Tc)	-55°C ~ 150°C (TJ)
FQPF9N30 MOSFET N-CH 300V 6A TO220F Fairchild Semiconductor	1,300	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	450mOhm @ 3A, 10V	Through Hole	5V @ 250µA	22 nC @ 10 V	300 V	±30V	740 pF @ 25 V	-	-	TO-220F-3	-	42W (Tc)	-55°C ~ 150°C (TJ)
FDB6690S MOSFET N-CH 30V 42A TO263AB Fairchild Semiconductor	1,224	-	询价单	数据表	PowerTrench®, SyncFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Ta)	4.5V, 10V	15.5mOhm @ 21A, 10V	Surface Mount	3V @ 1mA	15 nC @ 5 V	30 V	±20V	1238 pF @ 15 V	-	-	TO-263 (D2PAK)	-	48W (Tc)	-55°C ~ 150°C (TJ)
HUF75631S3S N CHANNEL ULTRAFET 100V, 33A, 4 Fairchild Semiconductor	1,130	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	40mOhm @ 33A, 10V	Surface Mount	4V @ 250µA	79 nC @ 20 V	100 V	±20V	1220 pF @ 25 V	-	-	TO-263AB (D2PAK)	-	120W (Tc)	-55°C ~ 175°C (TJ)
SI4463DY P-CHANNEL MOSFET Fairchild Semiconductor	187,340	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	2.5V, 4.5V	12mOhm @ 11.5A, 4.5V	Surface Mount	1.5V @ 250µA	60 nC @ 4.5 V	20 V	±12V	4481 pF @ 10 V	-	-	8-SOIC	-	1W (Ta)	-55°C ~ 150°C (TJ)

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