| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB9N25CTMMOSFET N-CH 250V 8.8A D2PAK Fairchild Semiconductor |
3,222 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | Surface Mount | 4V @ 250µA | 35 nC @ 10 V | 250 V | ±30V | 710 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS3612MOSFET N-CH 100V 3.4A 8SOIC Fairchild Semiconductor |
3,042 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.4A (Ta) | 6V, 10V | 120mOhm @ 3.4A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 100 V | ±20V | 632 pF @ 50 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) |
|
FDU068AN03LMOSFET N-CH 30V 17A/35A IPAK Fairchild Semiconductor |
2,514 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | Through Hole | 2.5V @ 250µA | 60 nC @ 10 V | 30 V | ±20V | 2525 pF @ 15 V | - | - | IPAK | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF75329D3MOSFET N-CH 55V 20A IPAK Fairchild Semiconductor |
1,792 | - |
|
数据表 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 65 nC @ 20 V | 55 V | ±20V | 1060 pF @ 25 V | - | - | IPAK | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI6N50TUMOSFET N-CH 500V 5.5A I2PAK Fairchild Semiconductor |
1,650 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1.3Ohm @ 2.8A, 10V | Through Hole | 5V @ 250µA | 22 nC @ 10 V | 500 V | ±30V | 790 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB3N60CTMMOSFET N-CH 600V 3A D2PAK Fairchild Semiconductor |
1,376 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.4Ohm @ 1.5A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 600 V | ±30V | 565 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP44N08MOSFET N-CH 80V 44A TO220-3 Fairchild Semiconductor |
1,147 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 34mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 50 nC @ 10 V | 80 V | ±25V | 1430 pF @ 25 V | - | - | TO-220-3 | - | 127W (Tc) | -55°C ~ 175°C (TJ) |
|
FDPF5N50UTYDTUTRANS MOSFET N-CH 500V 4A T/R Fairchild Semiconductor |
49,600 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFW540ATMMOSFET N-CH 100V 28A D2PAK Fairchild Semiconductor |
16,268 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 52mOhm @ 14A, 10V | Surface Mount | 4V @ 250µA | 78 nC @ 10 V | 100 V | ±20V | 1710 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD6690SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,500 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Ta) | 10V | 16mOhm @ 10A, 10V | Surface Mount | 3V @ 1mA | 24 nC @ 10 V | 30 V | ±20V | 2010 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |