富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

Fairchild Semiconductor

3,222 -
FQB9N25CTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V Surface Mount 4V @ 250µA 35 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
FDS3612

FDS3612

MOSFET N-CH 100V 3.4A 8SOIC

Fairchild Semiconductor

3,042 -
FDS3612

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Ta) 6V, 10V 120mOhm @ 3.4A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±20V 632 pF @ 50 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

Fairchild Semiconductor

2,514 -
FDU068AN03L

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 60 nC @ 10 V 30 V ±20V 2525 pF @ 15 V - - IPAK - 80W (Tc) -55°C ~ 175°C (TJ)
HUF75329D3

HUF75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor

1,792 -
HUF75329D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 26mOhm @ 20A, 10V Through Hole 4V @ 250µA 65 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - IPAK - 128W (Tc) -55°C ~ 175°C (TJ)
FQI6N50TU

FQI6N50TU

MOSFET N-CH 500V 5.5A I2PAK

Fairchild Semiconductor

1,650 -
FQI6N50TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 500 V ±30V 790 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
FQB3N60CTM

FQB3N60CTM

MOSFET N-CH 600V 3A D2PAK

Fairchild Semiconductor

1,376 -
FQB3N60CTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 3.4Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 600 V ±30V 565 pF @ 25 V - - TO-263 (D2PAK) - 75W (Tc) -55°C ~ 150°C (TJ)
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

Fairchild Semiconductor

1,147 -
FQP44N08

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 34mOhm @ 22A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 80 V ±25V 1430 pF @ 25 V - - TO-220-3 - 127W (Tc) -55°C ~ 175°C (TJ)
FDPF5N50UTYDTU

FDPF5N50UTYDTU

TRANS MOSFET N-CH 500V 4A T/R

Fairchild Semiconductor

49,600 -
FDPF5N50UTYDTU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFW540ATM

IRFW540ATM

MOSFET N-CH 100V 28A D2PAK

Fairchild Semiconductor

16,268 -
IRFW540ATM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 52mOhm @ 14A, 10V Surface Mount 4V @ 250µA 78 nC @ 10 V 100 V ±20V 1710 pF @ 25 V - - TO-263 (D2PAK) - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
FDD6690S

FDD6690S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,500 -
FDD6690S

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 16mOhm @ 10A, 10V Surface Mount 3V @ 1mA 24 nC @ 10 V 30 V ±20V 2010 pF @ 15 V - - TO-252 (DPAK) - 1.3W (Ta) -55°C ~ 150°C (TJ)
共 1251 条记录«上一页1... 4647484950515253...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户