富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

Fairchild Semiconductor

1,244 -
FQP32N12V2

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 50mOhm @ 16A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 120 V ±30V 1860 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
NDS8410A

NDS8410A

MOSFET N-CH 30V 10.8A 8SOIC

Fairchild Semiconductor

195,663 -
NDS8410A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10.8A (Ta) 4.5V, 10V 12mOhm @ 10.8A, 10V Surface Mount 3V @ 250µA 22 nC @ 5 V 30 V ±20V 1620 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDU6680

FDU6680

MOSFET N-CH 30V 12A/46A IPAK

Fairchild Semiconductor

82,141 -
FDU6680

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 46A (Tc) 4.5V, 10V 10mOhm @ 12A, 10V Through Hole 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1230 pF @ 15 V - - IPAK - 3.3W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
FDMC6296

FDMC6296

MOSFET N-CH 30V 11.5A 8MLP

Fairchild Semiconductor

20,197 -
FDMC6296

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 10.5mOhm @ 11.5A, 10V Surface Mount 3V @ 250µA 19 nC @ 5 V 30 V ±20V 2141 pF @ 15 V - - 8-MLP (3.3x3.3) - 900mW (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ)
FDU8580

FDU8580

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor

7,200 -
FDU8580

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 27 nC @ 10 V 20 V ±20V 1445 pF @ 10 V - - IPAK - 49.5W (Tc) -55°C ~ 175°C (TJ)
ISL9N304AP3

ISL9N304AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,000 -
ISL9N304AP3

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V Through Hole 3V @ 250µA 105 nC @ 10 V 30 V ±20V 4075 pF @ 15 V - - TO-220AB - 145W (Ta) -55°C ~ 175°C (TJ)
HUFA76429D3S

HUFA76429D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

1,800 -
HUFA76429D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 60 V ±16V 1480 pF @ 25 V - - TO-252 (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor

1,472 -
HUFA75637P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Through Hole 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
FQPF13N10

FQPF13N10

MOSFET N-CH 100V 8.7A TO220F

Fairchild Semiconductor

146,156 -
FQPF13N10

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 180mOhm @ 4.35A, 10V Through Hole 4V @ 250µA 16 nC @ 10 V 100 V ±25V 450 pF @ 25 V - - TO-220F-3 - 30W (Tc) -55°C ~ 175°C (TJ)
FDU6682

FDU6682

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

115,200 -
FDU6682

数据表

PowerTrench® TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V Through Hole 3V @ 250µA 31 nC @ 5 V 30 V ±20V 2400 pF @ 15 V - - TO-251 (IPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
共 1251 条记录«上一页1... 4445464748495051...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户