| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75344S3STMOSFET N-CH 55V 75A D2PAK Fairchild Semiconductor |
41,324 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 210 nC @ 20 V | 55 V | ±20V | 3200 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 285W (Tc) | -55°C ~ 175°C (TJ) |
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HUF76419S3STMOSFET N-CH 60V 29A D2PAK Fairchild Semiconductor |
31,359 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | Surface Mount | 3V @ 250µA | 28 nC @ 10 V | 60 V | ±16V | 900 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
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FDS6688ASMOSFET N-CH 30V 14.5A 8SOIC Fairchild Semiconductor |
11,680 | - |
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数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | Surface Mount | 3V @ 250µA | 63 nC @ 10 V | 30 V | ±20V | 2510 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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FQI19N20TUMOSFET N-CH 200V 19.4A I2PAK Fairchild Semiconductor |
11,380 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | Through Hole | 5V @ 250µA | 40 nC @ 10 V | 200 V | ±30V | 1600 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) |
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FDD6676SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
10,684 | - |
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数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 78A (Ta) | 4.5V, 10V | 6mOhm @ 16A, 10V | Surface Mount | 3V @ 1mA | 58 nC @ 5 V | 30 V | ±16V | 4770 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
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FQU2N60TUMOSFET N-CH 600V 2A IPAK Fairchild Semiconductor |
10,164 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | Through Hole | 5V @ 250µA | 11 nC @ 10 V | 600 V | ±30V | 350 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) |
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HUFA75329D3MOSFET N-CH 55V 20A IPAK Fairchild Semiconductor |
3,600 | - |
|
数据表 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 65 nC @ 20 V | 55 V | ±20V | 1060 pF @ 25 V | - | - | IPAK | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
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FQI16N25CTUMOSFET N-CH 250V 15.6A I2PAK Fairchild Semiconductor |
3,589 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15.6A (Tc) | 10V | 270mOhm @ 7.8A, 10V | Through Hole | 4V @ 250µA | 53.5 nC @ 10 V | 250 V | ±30V | 1080 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) |
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FDZ7296MOSFET N-CH 30V 11A 18BGA Fairchild Semiconductor |
3,302 | - |
|
数据表 |
PowerTrench® | 18-WFBGA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 8.5mOhm @ 11A, 10V | Surface Mount | 3V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 1520 pF @ 15 V | - | - | 18-BGA (2.5x4) | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) |
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HUF76423S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,200 | - |
|
数据表 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 30mOhm @ 35A, 10V | Surface Mount | 3V @ 250µA | 34 nC @ 10 V | 60 V | ±16V | 1060 pF @ 25 V | - | - | TO-263AB | - | 85W (Tc) | -55°C ~ 175°C (TJ) |