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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF75344S3ST

HUF75344S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor

41,324 -
HUF75344S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 75A, 10V Surface Mount 4V @ 250µA 210 nC @ 20 V 55 V ±20V 3200 pF @ 25 V - - TO-263 (D2PAK) - 285W (Tc) -55°C ~ 175°C (TJ)
HUF76419S3ST

HUF76419S3ST

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor

31,359 -
HUF76419S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V Surface Mount 3V @ 250µA 28 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-263 (D2PAK) - 75W (Tc) -55°C ~ 175°C (TJ)
FDS6688AS

FDS6688AS

MOSFET N-CH 30V 14.5A 8SOIC

Fairchild Semiconductor

11,680 -
FDS6688AS

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V Surface Mount 3V @ 250µA 63 nC @ 10 V 30 V ±20V 2510 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQI19N20TU

FQI19N20TU

MOSFET N-CH 200V 19.4A I2PAK

Fairchild Semiconductor

11,380 -
FQI19N20TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1600 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ)
FDD6676S

FDD6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

10,684 -
FDD6676S

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 78A (Ta) 4.5V, 10V 6mOhm @ 16A, 10V Surface Mount 3V @ 1mA 58 nC @ 5 V 30 V ±16V 4770 pF @ 15 V - - TO-252 (DPAK) - 1.3W (Ta) -55°C ~ 150°C (TJ)
FQU2N60TU

FQU2N60TU

MOSFET N-CH 600V 2A IPAK

Fairchild Semiconductor

10,164 -
FQU2N60TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.7Ohm @ 1A, 10V Through Hole 5V @ 250µA 11 nC @ 10 V 600 V ±30V 350 pF @ 25 V - - IPAK - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
HUFA75329D3

HUFA75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor

3,600 -
HUFA75329D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 26mOhm @ 20A, 10V Through Hole 4V @ 250µA 65 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - IPAK - 128W (Tc) -55°C ~ 175°C (TJ)
FQI16N25CTU

FQI16N25CTU

MOSFET N-CH 250V 15.6A I2PAK

Fairchild Semiconductor

3,589 -
FQI16N25CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V Through Hole 4V @ 250µA 53.5 nC @ 10 V 250 V ±30V 1080 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ)
FDZ7296

FDZ7296

MOSFET N-CH 30V 11A 18BGA

Fairchild Semiconductor

3,302 -
FDZ7296

数据表

PowerTrench® 18-WFBGA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 8.5mOhm @ 11A, 10V Surface Mount 3V @ 250µA 31 nC @ 10 V 30 V ±20V 1520 pF @ 15 V - - 18-BGA (2.5x4) - 2.1W (Ta) -55°C ~ 150°C (TJ)
HUF76423S3ST

HUF76423S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200 -
HUF76423S3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 60 V ±16V 1060 pF @ 25 V - - TO-263AB - 85W (Tc) -55°C ~ 175°C (TJ)
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