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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NDS9430

NDS9430

MOSFET P-CH 30V 5.3A 8SOIC

Fairchild Semiconductor

110,522 -
NDS9430

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 60mOhm @ 5.3A, 10V Surface Mount 3V @ 250µA 14 nC @ 10 V 30 V ±20V 528 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
IRFW730BTMNL

IRFW730BTMNL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

48,800 -
IRFW730BTMNL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V Surface Mount 4V @ 250µA 33 nC @ 10 V 400 V ±30V 1000 pF @ 25 V - - D2PAK - 3.13W (Ta), 73W (Tc) -55°C ~ 150°C (TJ)
FQP3N60

FQP3N60

MOSFET N-CH 600V 3A TO220-3

Fairchild Semiconductor

44,814 -
FQP3N60

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 3.6Ohm @ 1.5A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 150°C (TJ)
FDMS8672AS

FDMS8672AS

MOSFET N-CH 30V 18A/28A 8PQFN

Fairchild Semiconductor

34,183 -
FDMS8672AS

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta), 28A (Tc) 4.5V, 10V 5mOhm @ 18A, 10V Surface Mount 3V @ 1mA 40 nC @ 10 V 30 V ±20V 2600 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 70W (Tc) -55°C ~ 150°C (TJ)
FQB8N25TM

FQB8N25TM

MOSFET N-CH 250V 8A D2PAK

Fairchild Semiconductor

15,754 -
FQB8N25TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 550mOhm @ 4A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 250 V ±30V 530 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 87W (Tc) -55°C ~ 150°C (TJ)
IRFW730BTM

IRFW730BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

12,957 -
IRFW730BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V Surface Mount 4V @ 250µA 33 nC @ 10 V 400 V ±30V 1000 pF @ 25 V - - D2PAK - 3.13W (Ta), 73W (Tc) -55°C ~ 150°C (TJ)
HP4410DYT

HP4410DYT

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

12,742 -
HP4410DYT

数据表

UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 135mOhm @ 10A, 10V Surface Mount 1V @ 250µA 60 nC @ 10 V 30 V ±16V 1600 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQP3N90

FQP3N90

MOSFET N-CH 900V 3.6A TO220-3

Fairchild Semiconductor

10,000 -
FQP3N90

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 4.25Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 900 V ±30V 910 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 150°C (TJ)
FDM606P

FDM606P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor

9,587 -
FDM606P

数据表

PowerTrench® 8-SMD, Flat Lead Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V Surface Mount 1.5V @ 250µA 30 nC @ 4.5 V 20 V ±8V 2200 pF @ 10 V - - 8-MLP, MicroFET (3x2) - 1.92W (Ta) -55°C ~ 150°C (TJ)
FQPF6N50

FQPF6N50

MOSFET N-CH 500V 3.6A TO220F

Fairchild Semiconductor

5,884 -
FQPF6N50

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.3Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 500 V ±30V 790 pF @ 25 V - - TO-220F-3 - 42W (Tc) -55°C ~ 150°C (TJ)
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