| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NDS9430MOSFET P-CH 30V 5.3A 8SOIC Fairchild Semiconductor |
110,522 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | Surface Mount | 3V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 528 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) |
|
IRFW730BTMNLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
48,800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | Surface Mount | 4V @ 250µA | 33 nC @ 10 V | 400 V | ±30V | 1000 pF @ 25 V | - | - | D2PAK | - | 3.13W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP3N60MOSFET N-CH 600V 3A TO220-3 Fairchild Semiconductor |
44,814 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.6Ohm @ 1.5A, 10V | Through Hole | 5V @ 250µA | 13 nC @ 10 V | 600 V | ±30V | 450 pF @ 25 V | - | - | TO-220-3 | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMS8672ASMOSFET N-CH 30V 18A/28A 8PQFN Fairchild Semiconductor |
34,183 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Ta), 28A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | Surface Mount | 3V @ 1mA | 40 nC @ 10 V | 30 V | ±20V | 2600 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB8N25TMMOSFET N-CH 250V 8A D2PAK Fairchild Semiconductor |
15,754 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 550mOhm @ 4A, 10V | Surface Mount | 5V @ 250µA | 15 nC @ 10 V | 250 V | ±30V | 530 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 87W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFW730BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,957 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | Surface Mount | 4V @ 250µA | 33 nC @ 10 V | 400 V | ±30V | 1000 pF @ 25 V | - | - | D2PAK | - | 3.13W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) |
|
HP4410DYTN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,742 | - |
|
数据表 |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 135mOhm @ 10A, 10V | Surface Mount | 1V @ 250µA | 60 nC @ 10 V | 30 V | ±16V | 1600 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FQP3N90MOSFET N-CH 900V 3.6A TO220-3 Fairchild Semiconductor |
10,000 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 4.25Ohm @ 1.8A, 10V | Through Hole | 5V @ 250µA | 26 nC @ 10 V | 900 V | ±30V | 910 pF @ 25 V | - | - | TO-220-3 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
|
FDM606PMOSFET P-CH 20V 6.8A 8MLP Fairchild Semiconductor |
9,587 | - |
|
数据表 |
PowerTrench® | 8-SMD, Flat Lead Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.8A (Tc) | 1.8V, 4.5V | 30mOhm @ 6.8A, 4.5V | Surface Mount | 1.5V @ 250µA | 30 nC @ 4.5 V | 20 V | ±8V | 2200 pF @ 10 V | - | - | 8-MLP, MicroFET (3x2) | - | 1.92W (Ta) | -55°C ~ 150°C (TJ) |
|
FQPF6N50MOSFET N-CH 500V 3.6A TO220F Fairchild Semiconductor |
5,884 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 1.3Ohm @ 1.8A, 10V | Through Hole | 5V @ 250µA | 22 nC @ 10 V | 500 V | ±30V | 790 pF @ 25 V | - | - | TO-220F-3 | - | 42W (Tc) | -55°C ~ 150°C (TJ) |