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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

Fairchild Semiconductor

2,000 -
FQPF19N20T

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 100 V ±30V 1600 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
HUF76143P3

HUF76143P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

108,627 -
HUF76143P3

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 5.5mOhm @ 75A, 10V Through Hole 3V @ 250µA 114 nC @ 10 V 30 V ±20V 3900 pF @ 25 V - - TO-220-3 - 225W (Tc) -40°C ~ 150°C (TJ)
FDS6676S

FDS6676S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

38,079 -
FDS6676S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 14.5A (Ta) 4.5V, 10V 7.5mOhm @ 14.5A, 10V Surface Mount 3V @ 1mA 60 nC @ 5 V 30 V ±16V 4665 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
SFW9Z34TM

SFW9Z34TM

MOSFET P-CH 60V 18A D2PAK

Fairchild Semiconductor

20,800 -
SFW9Z34TM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 9A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 60 V ±30V 1155 pF @ 25 V - - TO-263 (D2PAK) - 3.8W (Ta), 82W (Tc) -55°C ~ 175°C (TJ)
FQU8N25TU

FQU8N25TU

MOSFET N-CH 250V 6.2A IPAK

Fairchild Semiconductor

5,629 -
FQU8N25TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 250 V ±30V 530 pF @ 25 V - - IPAK - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FQPF4N60

FQPF4N60

MOSFET N-CH 600V 2.6A TO220F

Fairchild Semiconductor

4,775 -
FQPF4N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.2Ohm @ 1.3A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±30V 670 pF @ 25 V - - TO-220F-3 - 36W (Tc) -55°C ~ 150°C (TJ)
FQPF5N50CFTU

FQPF5N50CFTU

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor

3,499 -
FQPF5N50CFTU

数据表

FRFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
IRL540A

IRL540A

MOSFET N-CH 100V 28A TO220-3

Fairchild Semiconductor

3,000 -
IRL540A

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 5V 58mOhm @ 14A, 5V Through Hole 2V @ 250µA 54 nC @ 5 V 100 V ±20V 1580 pF @ 25 V - - TO-220-3 - 121W (Tc) -55°C ~ 175°C (TJ)
RFD16N05_NL

RFD16N05_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,435 -
RFD16N05_NL

数据表

PSPICE® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 47mOhm @ 16A, 10V Through Hole 4V @ 250µA 80 nC @ 20 V 50 V ±20V 900 pF @ 25 V - - IPAK - 72W (Tc) -55°C ~ 175°C (TJ)
HUF76121S3S

HUF76121S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,200 -
HUF76121S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V Surface Mount 3V @ 250µA 30 nC @ 10 V 30 V ±20V 850 pF @ 25 V - - TO-263 (D2PAK) - 75W (Tc) -40°C ~ 150°C (TJ)
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