| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF19N20T11.8A, 200V, 0.15OHM, N CHANNEL Fairchild Semiconductor |
2,000 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 11.8A (Tc) | 10V | 150mOhm @ 5.9A, 10V | Through Hole | 5V @ 250µA | 40 nC @ 10 V | 100 V | ±30V | 1600 pF @ 25 V | - | - | TO-220F | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF76143P3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
108,627 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 5.5mOhm @ 75A, 10V | Through Hole | 3V @ 250µA | 114 nC @ 10 V | 30 V | ±20V | 3900 pF @ 25 V | - | - | TO-220-3 | - | 225W (Tc) | -40°C ~ 150°C (TJ) |
|
FDS6676SSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
38,079 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14.5A (Ta) | 4.5V, 10V | 7.5mOhm @ 14.5A, 10V | Surface Mount | 3V @ 1mA | 60 nC @ 5 V | 30 V | ±16V | 4665 pF @ 15 V | - | - | 8-SOIC | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SFW9Z34TMMOSFET P-CH 60V 18A D2PAK Fairchild Semiconductor |
20,800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | Surface Mount | 4V @ 250µA | 38 nC @ 10 V | 60 V | ±30V | 1155 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.8W (Ta), 82W (Tc) | -55°C ~ 175°C (TJ) |
|
FQU8N25TUMOSFET N-CH 250V 6.2A IPAK Fairchild Semiconductor |
5,629 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 550mOhm @ 3.1A, 10V | Through Hole | 5V @ 250µA | 15 nC @ 10 V | 250 V | ±30V | 530 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF4N60MOSFET N-CH 600V 2.6A TO220F Fairchild Semiconductor |
4,775 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.6A (Tc) | 10V | 2.2Ohm @ 1.3A, 10V | Through Hole | 5V @ 250µA | 20 nC @ 10 V | 600 V | ±30V | 670 pF @ 25 V | - | - | TO-220F-3 | - | 36W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF5N50CFTUMOSFET N-CH 500V 5A TO220F Fairchild Semiconductor |
3,499 | - |
|
数据表 |
FRFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.55Ohm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 625 pF @ 25 V | - | - | TO-220F-3 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL540AMOSFET N-CH 100V 28A TO220-3 Fairchild Semiconductor |
3,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 5V | 58mOhm @ 14A, 5V | Through Hole | 2V @ 250µA | 54 nC @ 5 V | 100 V | ±20V | 1580 pF @ 25 V | - | - | TO-220-3 | - | 121W (Tc) | -55°C ~ 175°C (TJ) |
|
RFD16N05_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,435 | - |
|
数据表 |
PSPICE® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 80 nC @ 20 V | 50 V | ±20V | 900 pF @ 25 V | - | - | IPAK | - | 72W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF76121S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,200 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 4.5V, 10V | 21mOhm @ 47A, 10V | Surface Mount | 3V @ 250µA | 30 nC @ 10 V | 30 V | ±20V | 850 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 75W (Tc) | -40°C ~ 150°C (TJ) |