富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP7042L

FDP7042L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

33,223 -
FDP7042L

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V Through Hole 2V @ 250mA 51 nC @ 4.5 V 30 V ±12V 2418 pF @ 15 V - - TO-220-3 - 83W (Ta) -65°C ~ 175°C (TJ)
IRLR120ATF

IRLR120ATF

MOSFET N-CH 100V 8.4A DPAK

Fairchild Semiconductor

30,174 -
IRLR120ATF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 5V 220mOhm @ 4.2A, 5V Surface Mount 2V @ 250µA 15 nC @ 5 V 100 V ±20V 440 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 35W (Tc) -55°C ~ 150°C (TJ)
FDD6796

FDD6796

MOSFET N-CH 25V 20A/40A DPAK

Fairchild Semiconductor

15,248 -
FDD6796

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta), 40A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 41 nC @ 10 V 25 V ±20V 2315 pF @ 13 V - - TO-252 (DPAK) - 3.7W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
IRFP254B

IRFP254B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,578 -
IRFP254B

数据表

- TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 140mOhm @ 12.5A, 10V Through Hole 4V @ 250µA 123 nC @ 10 V 250 V ±30V 3400 pF @ 25 V - - TO-3P - 221W (Tc) -55°C ~ 150°C (TJ)
FQB4N20TM

FQB4N20TM

MOSFET N-CH 200V 3.6A D2PAK

Fairchild Semiconductor

10,614 -
FQB4N20TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V Surface Mount 5V @ 250µA 6.5 nC @ 10 V 200 V ±30V 220 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQI5N50CTU

FQI5N50CTU

MOSFET N-CH 500V 5A I2PAK

Fairchild Semiconductor

10,517 -
FQI5N50CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - TO-262 (I2PAK) - 73W (Tc) -55°C ~ 150°C (TJ)
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor

9,850 -
FQD630TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 400mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 200 V ±25V 550 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor

8,203 -
FDD068AN03L

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 60 nC @ 10 V 30 V ±20V 2525 pF @ 15 V - - TO-252 (DPAK) - 80W (Tc) -55°C ~ 175°C (TJ)
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor

5,237 -
FDMB506P

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V Surface Mount 1.5V @ 250µA 30 nC @ 4.5 V 20 V ±8V 2960 pF @ 10 V - - 8-MLP, MicroFET (3x1.9) - 1.9W (Ta) -55°C ~ 150°C (TJ)
SFP9540

SFP9540

MOSFET P-CH 100V 17A TO220-3

Fairchild Semiconductor

4,583 -
SFP9540

数据表

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 200mOhm @ 8.5A, 10V Through Hole 4V @ 250µA 54 nC @ 10 V 100 V ±30V 1535 pF @ 25 V - - TO-220-3 - 132W (Tc) -55°C ~ 175°C (TJ)
共 1251 条记录«上一页1... 4546474849505152...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户