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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF6N40CMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
5,450 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±30V | 625 pF @ 25 V | - | - | TO-220F-3 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP16N15MOSFET N-CH 150V 16.4A TO220-3 Fairchild Semiconductor |
3,866 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.4A (Tc) | 10V | 160mOhm @ 8.2A, 10V | Through Hole | 4V @ 250µA | 30 nC @ 10 V | 150 V | ±25V | 910 pF @ 25 V | - | - | TO-220-3 | - | 108W (Tc) | -55°C ~ 175°C (TJ) |
|
FDU6030BLMOSFET N-CH 30V 10A/42A IPAK Fairchild Semiconductor |
3,525 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Ta), 42A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | Through Hole | 3V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 1143 pF @ 15 V | - | - | IPAK | - | 3.8W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FQU2N80TUMOSFET N-CH 800V 1.8A IPAK Fairchild Semiconductor |
3,037 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 6.3Ohm @ 900mA, 10V | Through Hole | 5V @ 250µA | 15 nC @ 10 V | 800 V | ±30V | 550 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF5N60CYDTUMOSFET N-CH 600V 4.5A TO220F-3 Fairchild Semiconductor |
2,878 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | Through Hole | 4V @ 250µA | 19 nC @ 10 V | 600 V | ±30V | 670 pF @ 25 V | - | - | TO-220F-3 (Y-Forming) | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FDU7030BLMOSFET N-CH 30V 14A/56A IPAK Fairchild Semiconductor |
2,400 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | Through Hole | 3V @ 250µA | 20 nC @ 5 V | 30 V | ±20V | 1425 pF @ 15 V | - | - | IPAK | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF76129S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,600 | - |
|
数据表 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 4.5V, 10V | 16mOhm @ 56A, 10V | Surface Mount | 3V @ 250µA | 45 nC @ 10 V | 30 V | ±20V | 1350 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 105W (Tc) | -40°C ~ 150°C (TJ) |
|
|
FQP7P20MOSFET P-CH 200V 7.3A TO220-3 Fairchild Semiconductor |
1,518 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 690mOhm @ 3.65A, 10V | Through Hole | 5V @ 250µA | 25 nC @ 10 V | 200 V | ±30V | 770 pF @ 25 V | - | - | TO-220-3 | - | 90W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS6692SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
1,349 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 12mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 25 nC @ 5 V | 30 V | ±16V | 2164 pF @ 15 V | - | - | 8-SOIC | - | 1W (Ta) | -55°C ~ 175°C (TJ) |
|
|
FQPF6N40CFMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
1,300 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±30V | 625 pF @ 25 V | - | - | TO-220F-3 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
