Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 52

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDPF7N50 MOSFET N-CH 500V 7A TO220F Fairchild Semiconductor	265,296	-	询价单	数据表	UniFET™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	900mOhm @ 3.5A, 10V	Through Hole	5V @ 250µA	16.6 nC @ 10 V	500 V	±30V	940 pF @ 25 V	-	-	TO-220F-3	-	39W (Tc)	-55°C ~ 150°C (TJ)
IRFS540A MOSFET N-CH 100V 17A TO220F Fairchild Semiconductor	88,157	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	52mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	78 nC @ 10 V	100 V	-	1710 pF @ 25 V	-	-	TO-220F-3	-	39W (Tc)	-55°C ~ 175°C (TJ)
IRLS540A N-CHANNEL POWER MOSFET Fairchild Semiconductor	12,350	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	5V	58mOhm @ 8.5A, 5V	Through Hole	2V @ 250µA	54 nC @ 5 V	100 V	±20V	1580 pF @ 25 V	-	-	TO-220F-3	-	44W (Tc)	-55°C ~ 175°C (TJ)
FQPF6N60C MOSFET N-CH 600V 5.5A TO220F Fairchild Semiconductor	5,632	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	2Ohm @ 2.75A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	600 V	±30V	810 pF @ 25 V	-	-	TO-220F-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IRFW610BTMFP001 N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,600	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.5Ohm @ 1.65A, 10V	Surface Mount	4V @ 250µA	9.3 nC @ 10 V	200 V	±30V	225 pF @ 25 V	-	-	D2PAK	-	3.13W (Ta), 38W (Tc)	-55°C ~ 150°C (TJ)
FQPF3N80CYDTU MOSFET N-CH 800V 3A TO220F-3 Fairchild Semiconductor	1,570	-	询价单	数据表	QFET®	TO-220-3 Full Pack, Formed Leads	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	4.8Ohm @ 1.5A, 10V	Through Hole	5V @ 250µA	16.5 nC @ 10 V	800 V	±30V	705 pF @ 25 V	-	-	TO-220F-3 (Y-Forming)	-	39W (Tc)	-55°C ~ 150°C (TJ)
HUF76429D3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,441	-	询价单	数据表	UltraFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	23mOhm @ 20A, 10V	Through Hole	3V @ 250µA	46 nC @ 10 V	60 V	±16V	1480 pF @ 25 V	-	-	IPAK	-	110W (Tc)	-55°C ~ 175°C (TJ)
FDS6688S MOSFET N-CH 30V 16A 8SOIC Fairchild Semiconductor	199,516	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	4.5V, 10V	6mOhm @ 16A, 10V	Surface Mount	3V @ 1mA	78 nC @ 10 V	30 V	±20V	3290 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 175°C (TJ)
FDU8896 MOSFET N-CH 30V 17A/94A IPAK Fairchild Semiconductor	113,351	-	询价单	数据表	PowerTrench®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 94A (Tc)	4.5V, 10V	5.7mOhm @ 35A, 10V	Through Hole	2.5V @ 250µA	60 nC @ 10 V	30 V	±20V	2525 pF @ 15 V	-	-	IPAK	-	80W (Tc)	-55°C ~ 175°C (TJ)
FQP5N60C POWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor	74,533	-	询价单	数据表	QFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	2.5Ohm @ 2.25A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	600 V	±30V	670 pF @ 25 V	-	-	TO-220-3	-	100W (Tc)	-55°C ~ 150°C (TJ)

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