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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQB19N10LTM

FQB19N10LTM

MOSFET N-CH 100V 19A D2PAK

Fairchild Semiconductor

5,002 -
FQB19N10LTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V Surface Mount 2V @ 250µA 18 nC @ 5 V 100 V ±20V 870 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
FDB20AN06A0

FDB20AN06A0

MOSFET N-CH 60V 9A/45A TO263AB

Fairchild Semiconductor

4,310 -
FDB20AN06A0

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 60 V ±20V 950 pF @ 25 V - - TO-263 (D2PAK) - 90W (Tc) -55°C ~ 175°C (TJ)
FDU8876

FDU8876

MOSFET N-CH 30V 15A/73A IPAK

Fairchild Semiconductor

2,750 -
FDU8876

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 73A (Tc) 4.5V, 10V 8.2mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 47 nC @ 10 V 30 V ±20V 1700 pF @ 15 V - - IPAK - 70W (Tc) -55°C ~ 175°C (TJ)
HUF76113SK8

HUF76113SK8

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,960 -
HUF76113SK8

数据表

UltraFET™ 8-VFSOP (0.091", 2.30mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 30mOhm @ 6.5A, 10V Surface Mount 3V @ 250µA 21 nC @ 10 V 30 V ±20V 585 pF @ 25 V - - US8 - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQB5N60CTM

FQB5N60CTM

4.5A, 600V, 2OHM, N CHANNEL , D2

Fairchild Semiconductor

1,618 -
FQB5N60CTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 600 V ±30V 670 pF @ 25 V - - TO-263AB (D2PAK) - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ)
FQD2N90TF

FQD2N90TF

MOSFET N-CH 900V 1.7A DPAK

Fairchild Semiconductor

1,054 -
FQD2N90TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
NDS9430A

NDS9430A

MOSFET P-CH 20V 5.3A 8SOIC

Fairchild Semiconductor

7,500 -
NDS9430A

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 50mOhm @ 5.3A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 20 V ±20V 950 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUFA76439P3

HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

1,551 -
HUFA76439P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V Through Hole 3V @ 250µA 84 nC @ 10 V 60 V ±16V 2745 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

Fairchild Semiconductor

1,160 -
HUF75333S3

数据表

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 10V 16mOhm @ 66A, 10V Through Hole 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-262 (I2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
FDC796N

FDC796N

MOSFET N-CH 30V 12.5A SUPERSOT6

Fairchild Semiconductor

631,293 -
FDC796N

数据表

PowerTrench® 6-SSOT Flat-lead, SuperSOT™-6 FLMP Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V Surface Mount 3V @ 250µA 20 nC @ 5 V 30 V ±20V 1444 pF @ 15 V - - SuperSOT™-6 FLMP - 2W (Ta) -55°C ~ 150°C (TJ)
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